CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance-行业新闻-嘉泰姆电源方案

产品概述 返回TOP

CXMS5222M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.

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 30V/5.8A

RDS(ON) =25mΩ@ VGS=10V, ID=5.8A

RDS(ON) =28mΩ@ VGS=4.5V, ID=5A

RDS(ON) =37mΩ@ VGS=2.5V, ID=4A

 High Density Cell Design For Ultra Low On-Resistance

 Subminiature surface mount package:SOT23-3L

 Battery management

 High speed switch

 Low power DC to DC converter

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Part Number	Mode	VDS(Max)	VGS	ID(Max)	RDS(on)	Application	Package
Part Number	Mode	VDS(Max)	VGS	ID(Max)	RDS(on)	Application	Package
CXMS5213	N channel	20V	12V	5.2A	37mΩ	①②③④⑤⑥⑦⑧	SOT23
CXMS5220	N channel	20V	8V	3A	22mΩ	①②③④⑤⑥⑦⑧	SOT23/SOT23-3
CXMS5220-N	N channel	20V	12V	5.2A	29mΩ	①②③④⑤⑥⑦⑧	SOT23
CXMS5221	Double N	20V	12V	6A	22mΩ	①②③④⑤⑥⑦⑧	SOP8
CXMS5222	N channel	30V	12V	5.8A	25mΩ	①②③④⑤⑥⑦⑧	SOT23/SOT23-3
CXMS5222-N	N channel	30V	20V	4.4A	35mΩ	①②③④⑤⑥⑦⑧	SOT23
CXMS5223	Double N	20V	12V	6A	21mΩ	①②③④⑤	SOT23-6/ TSSOP8
CXMS5224	Double N	20V	12V	5A	19mΩ	①②③④⑤⑥⑦⑧	TSSOP8/SOT26
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection