The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics the IC can be efficiently set thereby saving energy

The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

目录

1.产品概述       2.产品特点     

3.应用范围       4.技术规格书下载（PDF文档）

5.产品封装       6.电路原理图  

7.相关产品

   产品概述 返回TOP

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The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

   产品特点 返回TOP

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   应用范围 返回TOP

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●Notebook PCs 

●Cellular and portable phones 

●On-board power supplies 

●Li-ion battery systems

   技术规格书（产品PDF) 返回TOP 

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     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！

 

产品封装图 返回TOP

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电路原理图 返回TOP

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相关芯片选择指南 返回TOP               更多同类产品........

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功率MOSFET  N沟道
产品名称	封装	Rds (ON) (Ω) Vgs=2.5V MAX	Rds (ON) (Ω) Vgs=4.5V	Rds (ON) (Ω) Vgs=4.5V MAX	Vgsoff V MIN	Vgs off(V) MAX	Ciss pF	Vdss V	Vgss (V)	Id (A)	驱动 电压 (V)
CXCN5397A11BOMR	SOT23		0.13	0.17	1	3	150	30	20	1	4.5
CXCN5397A12B2MR	SOT23	0.16	0.075	0.1	0.7	1.4	180	20	12	1	2.5
CXCN5397A13BOMR	SOT23	0.14	0.075	0.1	0.5	1.2	220	20	8	1	1.5
CXCN5398A11A1PR	SOT89		0.075	0.105	1	2.5	270	30	20	4	4.5
CXCN5398A1265PR	SOT89	0.095	0.042	0.055	0.7	1.4	320	20	12	4	2.5
CXCN5398A1355PR	SOT89	0.07	0.037	0.05	0.5	1.2	390	20	8	4	1.5