CXSD6289两个同步降压型脉宽调制控制器脉冲宽度调制控制器设计用于同步驱动两个N通道mosfet buck拓扑

目录h3G嘉泰姆

1.产品概述                       2.产品特点h3G嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 h3G嘉泰姆
5.产品封装图                     6.电路原理图                   h3G嘉泰姆
7.功能概述                        8.相关产品h3G嘉泰姆

一,产品概述(General Description)      h3G嘉泰姆

          The CXSD6289 has two synchronous buck PWM control-lers with highh3G嘉泰姆
precision internal references voltage to of-fer accurate outputs. The PWMh3G嘉泰姆
controllers are designed to drive two N-channel MOSFETs in synchronoush3G嘉泰姆
buck topology. The device requires 12V and 5V power supplies.If the 5Vh3G嘉泰姆
supply is not available, the device can offer an optional shunt regulatorh3G嘉泰姆
5.8V for 5V supply.Both outputs have independent soft-start and enableh3G嘉泰姆
func-tions combined on the SS/EN pin. Connecting a capaci-tor from eachh3G嘉泰姆
SS/EN pin to the ground for setting the soft-start time, and pulling the SS/ENh3G嘉泰姆
pin voltage below 1V to disable regulator. The device also offers 180°phaseh3G嘉泰姆
shift function between OUT1 and OUT2.The default switching frequency ish3G嘉泰姆
300kHz (keep the FS pin open or short to GND), and the device also providesh3G嘉泰姆
the programmable switching frequency function to ad-just the switching frequencyh3G嘉泰姆
from 70kHz to 800kHz. Con-necting a resistor from FS pin to GND increases theh3G嘉泰姆
switching frequency. Conversely, connecting a resistor from FS pin to VCC12h3G嘉泰姆
decreases the switching frequency.There is no current sensing or under-voltageh3G嘉泰姆
sensing on the CXSD6289. However, it provides a simple short-circuit protection by monitoring the COMP1 pin and COMP2 pin for over-voltage. When any of two pinsh3G嘉泰姆
exceed their trip point and the condition keeps for 1-2 internal clock cycles (3-6us ath3G嘉泰姆
300kHz), all regulators are latched off.h3G嘉泰姆
二.产品特点(Features)h3G嘉泰姆

1.)Two Synchronous Buck Converters(OUT1,OUT2)h3G嘉泰姆
2.)Converter Input Voltage Range up to 12Vh3G嘉泰姆
3.)0.6V Reference for OUT1 with 0.8% Accuracyh3G嘉泰姆
4.)3.3V Reference for OUT2 with 0.8% Accuracyh3G嘉泰姆
5.)Both Outputs have Independent Soft-Start andh3G嘉泰姆
    Enable Functionsh3G嘉泰姆
6.)Internal 300kHz Oscillator and Programmableh3G嘉泰姆
    Frequency Range from 70 kHz to 800kHzh3G嘉泰姆
7.)180 Degrees Phase Shift etween OUT1 and OUT2h3G嘉泰姆
8.)Short-Circuit Protectionh3G嘉泰姆
9.)Thermally Enhanced SOP-20 Packageh3G嘉泰姆
10.)Lead Free and Green Devices Availableh3G嘉泰姆
(RoHS Compliant)h3G嘉泰姆
三,应用范围 (Applications)h3G嘉泰姆

Graphic Cardsh3G嘉泰姆
Low-Voltage Distributed Power Suppliesh3G嘉泰姆
SMPS Applicationh3G嘉泰姆
四.下载产品资料PDF文档 h3G嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！h3G嘉泰姆

 h3G嘉泰姆

五,产品封装图 (Package)h3G嘉泰姆
h3G嘉泰姆

六.电路原理图h3G嘉泰姆

h3G嘉泰姆
七,功能概述h3G嘉泰姆

Output Inductor Selection (Cont.)h3G嘉泰姆
Where Fs is the switching frequency of the regulator. Al-though increase the inductor value and frequencyh3G嘉泰姆
reduce the ripple current and voltage, but there is a tradeoff ex-ists between the inductor’s ripple current andh3G嘉泰姆
the regula-tor load transient response time.A smaller inductor will give the regulator a faster load transienth3G嘉泰姆
response at the expense of higher ripple current.Increasing the switching frequency (FS) also reduces theh3G嘉泰姆
ripple current and voltage, but it will increase the switch-ing loss of the MOSFET and the power dissipationh3G嘉泰姆
of the converter. The maximum ripple current occurs at the maximum input voltage. A good starting point ish3G嘉泰姆
to choose the ripple current to be approximately 30% of the maxi-mum output current.Once the inductanceh3G嘉泰姆
value has been chosen, select an inductor that is capable of carrying the required peak cur-rent without goingh3G嘉泰姆
into saturation. In some types of inductors, especially core that is made of ferrite, the ripple current will increaseh3G嘉泰姆
abruptly when it saturates. This will result in a larger output ripple voltage.h3G嘉泰姆
Output Capacitor Selectionh3G嘉泰姆
Higher Capacitor value and lower ESR reduce the output ripple and the load transient drop. Therefore select highh3G嘉泰姆
performance low ESR capacitors that are intended for switching regulator applications. In some applications,h3G嘉泰姆
multiple capacitors have to be parallel to achieve the de-sired ESR value. A small decoupling capacitor in parallelh3G嘉泰姆
for bypassing the noise is also recommended, and the voltage rating of the output capacitors are also must beh3G嘉泰姆
considered. If tantalum capacitors are used, make sure they are surge tested by the manufactures. If in doubt,h3G嘉泰姆
consult the capacitors manufacturer.h3G嘉泰姆
Input Capacitor Selectionh3G嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, h3G嘉泰姆

select the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage.h3G嘉泰姆
The maximum RMS current rating requirement is approxi-mately IOUT/2, where IOUT is the load current. h3G嘉泰姆

During power up, the input capacitors have to handle large amount of surge current. If tantalum capacitors h3G嘉泰姆

are used, make sure they are surge tested by the manufactures. If in doubt, consult the capacitors h3G嘉泰姆

manufacturer. For high frequency decoupling, a ceramic capacitor 1uF can be connected between the h3G嘉泰姆

drain of upper MOSFET and the source of lower MOSFET. h3G嘉泰姆
MOSFET Selectionh3G嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reverse transfer h3G嘉泰姆

capacitance (CRSS) and maximum output current requirement. The losses in the MOSFETs have h3G嘉泰姆

two components: conduction loss and transition loss. For the upper and lower MOSFET, the h3G嘉泰姆

losses are approximately given by the following :h3G嘉泰姆
PUPPER=IOUT(1+TC)(RDS(ON))D+(0.5)(IOUT)(VIN)(tSW)FSh3G嘉泰姆
PLOWER=IOUT(1+TC)(RDS(ON))(1-D)h3G嘉泰姆
Where I is the load current OUT TC is the temperature dependency of RDS(ON) F is the switchingh3G嘉泰姆

 frequency St is the switching interval sw D is the duty cycle Note that both MOSFETs have h3G嘉泰姆

conduction losses while the upper MOSFET include an additional transition loss.The switching h3G嘉泰姆

internal, tsw, is a function of the reverse transfer capacitance CRSS. The (1+TC) term is to h3G嘉泰姆

factor in the temperature depen-dency of the RDS(ON) and can be extracted from the “RDS(ON)h3G嘉泰姆
vs Temperature” curve of the power MOSFET.h3G嘉泰姆
Short Circuit Protectionh3G嘉泰姆
The CXSD6289 provides a simple short circuit protection function, and it is not easy to predict itsh3G嘉泰姆

 performance, since many factors can affect how well it works. Therefore, the limitations and h3G嘉泰姆

suggestions of this method must be pro-vided for users to understand how to work it well.Theh3G嘉泰姆

 short circuit protection was not designed to work for the output in initial short condition. In this h3G嘉泰姆

case, the short circuit protection may not work, and damage the MOSFETs. If the circuit still works,h3G嘉泰姆

 remove the short can cause an inductive kick on the phase pin, and it may damage the IC and h3G嘉泰姆

MOSFETs.  If the resistance of the short is not low enough to cause protection, the regulator willh3G嘉泰姆

 work as the load hash3G嘉泰姆

Short Circuit Protection (Cont.)h3G嘉泰姆
increased, and continue to regulate up until the MOSFETs is damaged. The resistance of the shorth3G嘉泰姆

 should include wiring, PCB traces, contact resistances, and all of the return paths.The higher duty h3G嘉泰姆

cycle will give a higher COMP voltage level, and it is easy to touch the trip point. The compensa-h3G嘉泰姆
tion components also affect the response of COMP voltage; smaller caps may give a faster response.h3G嘉泰姆
The output current has faster rising time during short;the COMP pin will have a sharp rise. However,h3G嘉泰姆

 if the cur-rent rises too fast, it may cause a false trip. The output capacitance and its ESR can affecth3G嘉泰姆

 the rising time of the current during short.h3G嘉泰姆

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