两个低电压降调节器CXSD62114双降压恒定时间同步PWM控制器内部转换MOSFET

发布时间:2020-04-23 14:30:37 浏览次数:283 作者:oumao18 来源:嘉泰姆
摘要:CXSD62114集成了双降压、恒定时间、同步PWM控制器(为每个通道驱动双N通道mosfet)和两个低电压降调节器以及各种保护装置集成了双降压、恒定的时间,同步PWM控制器(驱动双N通道mosfet每个通道)和两个低压降调节器以及各种保护变成芯片。脉冲宽度调制控制器降低电池的高电压为NB应用产生低电压。PWM1和通过设置电阻分压器,PWM2可以从2V调整到5.5V从VOUTx到GND。
两个低电压降调节器CXSD62114双降压恒定时间同步PWM控制器内部转换MOSFET

目录bLN嘉泰姆

1.产品概述                       2.产品特点bLN嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 bLN嘉泰姆
5.产品封装图                     6.电路原理图                   bLN嘉泰姆
7.功能概述                        8.相关产品bLN嘉泰姆

一,产品概述(General Description)    bLN嘉泰姆


  The CXSD62114 integrates dual step-down, constant-on-time,bLN嘉泰姆

synchronous PWM controllers (that drives dual N-channel MOSFETs forbLN嘉泰姆
each channel) and two low drop-out regulators as well as various protectionsbLN嘉泰姆
into a chip.The PWM controllers step down high voltage of a batterybLN嘉泰姆
to generate low-voltage for NB applications. The output of PWM1 andbLN嘉泰姆
PWM2 can be adjusted from 2V to 5.5V by setting a resistive voltage-dividerbLN嘉泰姆
from VOUTx to GND.The linear regulators provide 5V and 3.3V output forbLN嘉泰姆
standby power supply. The linear regulators provide up to 100mA outputbLN嘉泰姆
current. When the PWMx output voltage is higher than LDOx bypass threshold, the related LDOx regulator is shut off and its output is connected to VOUTxbLN嘉泰姆
by internal switchover MOSFET. It can save power dissipation. The chargebLN嘉泰姆
pump circuit with 250kHz clock driver uses VOUT1 as its power supply to generate ap-proximately 15V DC voltage.bLN嘉泰姆
  The CXSD62114 provides excellent transient response and accurate DC output voltage in either PFM or PWM Mode. In Pulse-Frequency Mode (PFM),bLN嘉泰姆
the CXSD62114 provides very high efficiency over light to heavy loadsbLN嘉泰姆

with loading-modulated switching frequencies. The Forced-PWM Mode works nearly at constant frequency for low-noise requirements. The unique ultrasonicbLN嘉泰姆
mode maintains the switching frequency above 25kHz, which eliminates noise in audio application.The CXSD62114A/D has individual enable controls forbLN嘉泰姆
each PWM channels. Pulling both EN1/2 pin low shuts down the all of outputs unless LDO3 output. The LDO3 and LDO5 of CXSD62114B/C are always on standby power.The CXSD62114 is available in a TQFN3x3-20 package.bLN嘉泰姆
二.产品特点(Features)bLN嘉泰姆


Wide Input voltage Range from 5.5V to 25VbLN嘉泰姆
Provide 5 Independent Outputs with ±1.0% Accu-racy Over-TemperaturebLN嘉泰姆
PWM1 Controller with Adjustable (2V to 5.5V) Out-putbLN嘉泰姆
- PWM2 Controller with Adjustable (2V to 5.5V) Out-putbLN嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V OutputbLN嘉泰姆
- 100mA Low Dropout Regulator (LDO3) with Fixed 3.3V OutputbLN嘉泰姆
250kHz Clock Signal for 15V Charge Pump (Used PWM1 as Its Power Supply)bLN嘉泰姆
Excellent Line/Load Regulations about±1.5% overbLN嘉泰姆
temperature range at PWM ChannelsbLN嘉泰姆
Low Consumption in Standby ModebLN嘉泰姆
2Cells Input Battery SupportbLN嘉泰姆
Built in POR Control Scheme ImplementedbLN嘉泰姆
Constant On-Time Control SchemebLN嘉泰姆
Built in Soft Start for PWM Outputs and Soft StopbLN嘉泰姆
for PWM Outputs and LDO OutputsbLN嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETbLN嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)bLN嘉泰姆
Built in Power Good Indicators (PWMs)bLN嘉泰姆
60% Under-Voltage and 115% Over-Voltage Protec-tions (PWM)bLN嘉泰姆
Adjustable Current-Limit Protection (PWMs)bLN嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)bLN嘉泰姆
Over-Temperature ProtectionbLN嘉泰姆
3mmx3mm Thin QFN-20 (TQFN3x3-20) packagebLN嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)bLN嘉泰姆
三,应用范围 (Applications)bLN嘉泰姆


Notebook and Sub-Notebook ComputersbLN嘉泰姆
Portable DevicesbLN嘉泰姆
DDR1, DDR2, and DDR3 Power SuppliesbLN嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered DevicesbLN嘉泰姆
Graphic CardsbLN嘉泰姆
Game ConsolesbLN嘉泰姆
TelecommunicationsbLN嘉泰姆
四.下载产品资料PDF文档 bLN嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持bLN嘉泰姆

 QQ截图20160419174301.jpgbLN嘉泰姆

五,产品封装图 (Package)bLN嘉泰姆


blob.pngbLN嘉泰姆
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六.电路原理图bLN嘉泰姆


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七,功能概述bLN嘉泰姆


the node.bLN嘉泰姆
Decoupling capacitor, the resistor dividers, boot capacitors, and current-limit stetting resistor shouldbLN嘉泰姆
be close to their pins. (For example, place the decoupling ceramic capacitor near the drain of thebLN嘉泰姆
high-side MOSFET as close as possible. The bulk capacitors are also placednear the drain).bLN嘉泰姆
The input capacitor should be near the drain of the upper MOSFET; the high quality ceramic decouplingbLN嘉泰姆
capacitor can be put close to the VCC and GND pins;the output capacitor should be near the loads. ThebLN嘉泰姆
input capacitor GND should be close to the output ca-pacitor GND and the lower MOSFET GND.bLN嘉泰姆
The drain of the MOSFETs (V IN and PHASEx nodes)should be a large plane for heat sinking. And PHASExbLN嘉泰姆
pin traces are also the return path for UGATEx. Con-nect these pins to the respective converter’s upperbLN嘉泰姆
MOSFET source.bLN嘉泰姆
The controller used ripple mode control. Build the re-sistor divider close to the FB1 pin so that the highbLN嘉泰姆
impedance trace is shorter when the output voltage is in ad justable mode. And the FB1 pin traces can’t bebLN嘉泰姆
close to the switching signal traces (UGATEx, LGATEx,BOOTx, and PHASEx).bLN嘉泰姆
The PGND trace should be a separate trace, and in-dependently go to the source of the low-side MOSFETsbLN嘉泰姆
for current-limit accuracy.bLN嘉泰姆
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