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CXSD62108单相恒定时间同步的脉宽调制控制器驱动N通道mosfet笔记本电脑中产生低压芯片组RAM电源的电压
发表时间:2020-04-23浏览次数:76
CXSD62108单相恒定时间同步的脉宽调制控制器驱动N通道mosfet笔记本电脑中产生低压芯片组RAM电源的电压
 

目录aEc嘉泰姆

1.产品概述                       2.产品特点aEc嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 aEc嘉泰姆
5.产品封装图                     6.电路原理图                   aEc嘉泰姆
7.功能概述                        8.相关产品aEc嘉泰姆

一,产品概述(General Description)         aEc嘉泰姆
      The CXSD62108 is a single-phase, constant-on-time,synchronous PWMaEc嘉泰姆
controller, which drives N-channel MOSFETs. The CXSD62108 steps down highaEc嘉泰姆
voltage to generate low-voltage chipset or RAM supplies in notebook computers.aEc嘉泰姆
      The CXSD62108 provides excellent transient response and accurate DCaEc嘉泰姆
voltage output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM),aEc嘉泰姆
the CXSD62108 provides very high efficiency over light to heavy loads with aEc嘉泰姆

loading-modulated switching frequencies. In PWM Mode, the converter worksaEc嘉泰姆

nearly at constant frequency for low-noise requirements.aEc嘉泰姆
    The CXSD62108 is equipped with accurate positive current-limit, outputaEc嘉泰姆
under-voltage, and output over-voltage protections, perfect for NB applications.aEc嘉泰姆
The Power-On-Reset function monitors the voltage on VCC and PVCC toaEc嘉泰姆
prevent wrong operation during power-on. The CXSD62108 has a 1.2ms digitalaEc嘉泰姆
soft-start and built-in an integrated output discharge device for soft-stop. An aEc嘉泰姆

internal integrated soft-start ramps up the output voltage with programmable aEc嘉泰姆

slew rate to reduce the start-up current. A soft-stop function actively aEc嘉泰姆

discharges the output capacitors.aEc嘉泰姆
       The CXSD62108 is available in 14pin TSSOP, 14pin QFN and 16pin TQFNaEc嘉泰姆
packages respectively.aEc嘉泰姆
二.产品特点(Features)aEc嘉泰姆
Adjustable Output Voltage from +0.75V to +5.5VaEc嘉泰姆
- 0.75V Reference VoltageaEc嘉泰姆
- ±1% Accuracy Over-TemperatureaEc嘉泰姆
Operates from An Input Battery Voltage Range ofaEc嘉泰姆
+1.8V to +28VaEc嘉泰姆
Power-On-Reset Monitoring on VCC Pin and PVCC PinaEc嘉泰姆
Excellent Line and Load Transient ResponsesaEc嘉泰姆
PFM Mode for Increased Light Load EfficiencyaEc嘉泰姆
Programmable PWM Frequency from 100kHz to 500kHzaEc嘉泰姆
Integrated MOSFET DriversaEc嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETaEc嘉泰姆
Adjustable Integrated Soft-Start and Soft-StopaEc嘉泰姆
Selectable Forced PWM or Automatic PFM/PWM ModeaEc嘉泰姆
Power Good MonitoringaEc嘉泰姆
70% Under-Voltage ProtectionaEc嘉泰姆
125% Over-Voltage ProtectionaEc嘉泰姆
Adjustable Current-Limit ProtectionaEc嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)aEc嘉泰姆
Over-Temperature ProtectionaEc嘉泰姆
TSSOP-14, QFN3.5x3.5-14, and TQFN3x3-16 PackagesaEc嘉泰姆
Lead Free and Green Devices Available (RoHS Compliant)aEc嘉泰姆
三,应用范围 (Applications)aEc嘉泰姆
NotebookaEc嘉泰姆
Table PCaEc嘉泰姆
Hand-Held PortableaEc嘉泰姆
AIO PCaEc嘉泰姆
四.下载产品资料PDF文档 aEc嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持aEc嘉泰姆

 QQ截图20160419174301.jpgaEc嘉泰姆

五,产品封装图 (Package)aEc嘉泰姆

blob.pngaEc嘉泰姆

六.电路原理图aEc嘉泰姆


blob.pngaEc嘉泰姆
七,功能概述aEc嘉泰姆


Layout Consideration (Cont.)aEc嘉泰姆
· The signals going through theses traces have both high dv/dt and high di/dt with high peak charging and dis-aEc嘉泰姆
charging current. The traces from the gate drivers to the MOSFETs (UGATE and LGATE) should be short and wide.aEc嘉泰姆
· Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz-aEc嘉泰姆
ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node. InaEc嘉泰姆
addition, the large layout plane between the drain of the MOSFETs (VIN and PHASE nodes) can get better heataEc嘉泰姆
sinking.aEc嘉泰姆
· The PGND is the current sensing circuit reference ground and also the power ground of the LGATE low-aEc嘉泰姆
side MOSFET. On the hand, the PGND trace should be a separate trace and independently go to the source of theaEc嘉泰姆
low-side MOSFET. Besides, the current sense resistor should be close to OCSET pin to avoid parasitic capaci-aEc嘉泰姆
tor effect and noise coupling.aEc嘉泰姆
· Decoupling capacitors, the resistor-divider, and boot capacitor should be close to their pins. (For example, placeaEc嘉泰姆
the decoupling ceramic capacitor close to the drain of the high-side MOSFET as close as possible.)aEc嘉泰姆
· The input bulk capacitors should be close to the drain of the high-side MOSFET, and the output bulk capacitorsaEc嘉泰姆
should be close to the loads. The input capacitor’s ground should be close to the grounds of the output capacitorsaEc嘉泰姆
and low-side MOSFET.aEc嘉泰姆
· Locate the resistor-divider close to the FB pin to mini-mize the high impedance trace. In addition, FB pin tracesaEc嘉泰姆
can’t be close to the switching signal traces (UGATE, LGATE, BOOT, and PHASE).aEc嘉泰姆
八,相关产品                      更多同类产品...... aEc嘉泰姆


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