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CXSD62117双通道电压模式和同步PWM控制器驱动双N通道mosfet两个通道均采用180度相移
发表时间:2020-04-24浏览次数:133
CXSD62117双通道电压模式和同步PWM控制器驱动双N通道mosfet两个通道均采用180度相移
 

目录FUB嘉泰姆

1.产品概述                       2.产品特点FUB嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 FUB嘉泰姆
5.产品封装图                     6.电路原理图                   FUB嘉泰姆
7.功能概述                        8.相关产品

一,产品概述(General Description)         FUB嘉泰姆
        The CXSD62117 is a dual channel voltage mode and syn-chronousFUB嘉泰姆
PWM controller which drives dual N-channel MOSFETs. The two channelsFUB嘉泰姆
are operated with 180 de-gree phase shift.The device integrates all of theFUB嘉泰姆
control, monitoring, and protecting functions into a single package; providesFUB嘉泰姆
two controlled power output with over-voltage, over-temperature, andFUB嘉泰姆
over-current protections.FUB嘉泰姆
       The CXSD62117 provides excellent regulation for output load variation.FUB嘉泰姆
The internal 1.0V temperature-compen- sated reference voltage providesFUB嘉泰姆
high accuracy of 0.8% over line and temperature. The device includes aFUB嘉泰姆
50kHz free-running triangle-wave oscillator that is adjustable from 50kHzFUB嘉泰姆
to 400kHz.The CXSD62117 has been equipped with excellent pro-tectionFUB嘉泰姆
functions: POR, OCP, UVP, and OVP protections.The Power-On-Reset (POR)FUB嘉泰姆
circuit can monitor the VCC and OCSET voltage to make sure the supplyFUB嘉泰姆
voltage ex-ceeds their threshold voltage while the controller is running. TheFUB嘉泰姆
Over-Current Protection (OCP) monitors the output current by using theFUB嘉泰姆
voltage drop across the high side MOSFET’s RDS(ON). When the outputFUB嘉泰姆
current reaches the trip point, the controller will be latched. Under-VoltageFUB嘉泰姆

Protection (UVP) and Over-Voltage Protection (OVP) moni-tor the FBFUB嘉泰姆
voltage to protect CXSD62117 from burnout when output voltage isFUB嘉泰姆
under 50% or over 120% of normal out-put voltage. The CXSD62117FUB嘉泰姆
is available in SOP-20 package.FUB嘉泰姆

二.产品特点(Features)FUB嘉泰姆
Single 12V Power Supply RequiredFUB嘉泰姆
Excellent Output Voltage RegulationFUB嘉泰姆
- 1.0V±0.8% Internal Reference Over Line and TemperatureFUB嘉泰姆
Simple Single Loop Control DesignFUB嘉泰姆
- Voltage Mode PWM Control 0~100% Duty RatioFUB嘉泰姆
Programmable Frequency Range from 50kHz toFUB嘉泰姆
400kHz (Constant 50kHz when Floating)FUB嘉泰姆
Integrated Soft-Start and Soft-Off (Patent Pending)FUB嘉泰姆
Support Pre-Biased Power-OnFUB嘉泰姆
Both Channel with 180o Phase ShiftFUB嘉泰姆
Integrated Boot-Strap DiodeFUB嘉泰姆
Over-Current ProtectionFUB嘉泰姆
- Sense High Side MOSFET’s RDS(ON)FUB嘉泰姆
120% Over-Voltage ProtectionFUB嘉泰姆
50% Under-Voltage ProtectionFUB嘉泰姆
Over-Temperature ProtectionFUB嘉泰姆
Available in SOP-20 PackageFUB嘉泰姆
Lead Free and Green Devices Available (RoHS Compliant)FUB嘉泰姆
三,应用范围 (Applications)FUB嘉泰姆
SMPSFUB嘉泰姆

四.下载产品资料PDF文档 FUB嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持FUB嘉泰姆

 QQ截图20160419174301.jpgFUB嘉泰姆

 FUB嘉泰姆

五,产品封装图 (Package)FUB嘉泰姆

FUB嘉泰姆

六.电路原理图FUB嘉泰姆

blob.pngFUB嘉泰姆

七,功能概述FUB嘉泰姆

Layout ConsiderationFUB嘉泰姆
In any high switching frequency converter, a correct lay-out is important to ensure proper operation of theFUB嘉泰姆
regulator. With power devices switching at 200kHz, the resulting current transient will cause voltage spike across the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transition of the PWM MOSFET. Before turn-off, the MOSFET is car-rying the full load current. During turn-off, current stops flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of the circuit generates a large voltage spike during the switching interval. In general, using short and wide printed circuit traces should minimize interconnecting imped- ances and the magnitude of voltage spike. And signal and power grounds are to be kept separating till com-bined using the ground plane construction or single point grounding. Figure 8. illustrates the layout, with bold linesFUB嘉泰姆
Layout Consideration (Cont.)FUB嘉泰姆

indicating high current paths; these traces must be short and wide. Components along the bold lines should beFUB嘉泰姆

placed lose together. Below is a checklist for your layout:- Keep the switching nodes (UGATE, LGATE, and PHASE)away from sensitive small signal nodes since these nodes are fast moving signals. Therefore, keep tracesFUB嘉泰姆
to these nodes as short as possible.FUB嘉泰姆
- The traces from the gate drivers to the MOSFETs (UGATEand LGATE) should be short and wide.FUB嘉泰姆

- Place the source of the high-side MOSFET and the drainof the low-side MOSFET as close as possible. Minimiz-ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.FUB嘉泰姆

- Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be closeFUB嘉泰姆

their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET asFUB嘉泰姆
close as possible. The bulk capacitors are also placed near the drain).FUB嘉泰姆
- The input capacitor should be near the drain of the up-per MOSFET; the output capacitor should be near theFUB嘉泰姆
loads. The input capacitor GND should be close to the lower MOSFET GND.FUB嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes)should be a large plane for heat sinking.FUB嘉泰姆
- The ROCSET resistance should be placed near the IC as close as possible.FUB嘉泰姆
- The decoupling capacitor for VCC should be placed near the VCC and GND. CBOOT should be connected asFUB嘉泰姆
close to the BOOT and PHASE pins as possible. FUB嘉泰姆

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