2.6V至6.5V输入电源VGON和VGOFF的线性调节器控制器CXSU63137电流模式升压调节器大电流运算放大器

首页 > 新闻中心 > 产品促销

发表时间：2020-06-08浏览次数：191

2.6V至6.5V输入电源VGON和VGOFF的线性调节器控制器CXSU63137电流模式升压调节器大电流运算放大器

目录hEt嘉泰姆

1.产品概述         2.产品特点hEt嘉泰姆
3.应用范围       4.下载产品资料PDF文档 hEt嘉泰姆
5.产品封装图                     6.电路原理图             hEt嘉泰姆
7.功能概述       8.相关产品hEt嘉泰姆

一,产品概述(General Description) hEt嘉泰姆

The CXSU63137 integrates with a high-performance step-up converter, two linear-regulator controllers, a high voltage switch and one (CXSU63137), three (CXSU63137) or five (CXSU63137) high current operational amplifiers for TFT-LCD applications.The main step-up regulator is a current-mode, fixed-fre-quency PWM switching regulator. The 1.2MHz switching frequency allows the usage of low-profile inductors and ceramic capacitors to minimize the thickness of LCD panel designs.hEt嘉泰姆
The linear-regulator controllers used external transistors provide regulated the gate-driver of TFT-LCD VGON and VGOFF supplies.hEt嘉泰姆
The amplifiers are ideal for VCOM and VGAMMA applications, withhEt嘉泰姆
150m A peak output current drive, 10MHz bandwidth, and 13V/μs slewhEt嘉泰姆
rate. All inputs and outputs are rail-to-rail.hEt嘉泰姆
The CXSU63137/1/2 is available in a tiny 5mm x 5mm 32-pin QFN package (TQFN5x5-32).hEt嘉泰姆
二.产品特点(Features)hEt嘉泰姆

· 2.6V to 6.5V Input Supply Range hEt嘉泰姆

· Current-Mode Step-Up Regulator hEt嘉泰姆

- Fast Transient Response hEt嘉泰姆

- 1.2MHz Fixed Operating Frequency hEt嘉泰姆

· ±1.5% High-Accuracy Output Voltage hEt嘉泰姆

· 3A, 20V, 0.25W Internal N-Channel MOSFET hEt嘉泰姆

· High Efficiency hEt嘉泰姆

· Low Quiescent Current (0.6mA Typical) hEt嘉泰姆

· Linear-Regulator Controllers for VGON and VGOFF hEt嘉泰姆

· High-performance Operational Amplifiers hEt嘉泰姆

- ±150mA Output Short-Circuit CurrenthEt嘉泰姆

- 13V/ms Slew Rate - 10MHz, -3dB Bandwidth hEt嘉泰姆

- Rail-to-Rail Inputs/Outputs hEt嘉泰姆

· Fault-Delay Timer and Fault Latch for All Regulator Outputs hEt嘉泰姆

· Over-Temperature Protection hEt嘉泰姆

· Available in Compact 32-pin 5mmx5mm Thin QFN Package (TQFN5x5-32) hEt嘉泰姆

· Lead Free Available (RoHS Compliant)hEt嘉泰姆

三,应用范围 (Applications)hEt嘉泰姆

TFT LCD Displays for MonitorshEt嘉泰姆
TFT LCD Displays for Notebook ComputershEt嘉泰姆
Automotive DisplayshEt嘉泰姆
四.下载产品资料PDF文档 hEt嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！hEt嘉泰姆

QQ截图20160419174301.jpg hEt嘉泰姆

五,产品封装图 (Package)hEt嘉泰姆

hEt嘉泰姆
Pin Function DescriptionhEt嘉泰姆

PinhEt嘉泰姆	NamehEt嘉泰姆			Function DescriptionhEt嘉泰姆
PinhEt嘉泰姆	CXSU63137hEt嘉泰姆	CXSU63137-1hEt嘉泰姆	CXSU63137-2hEt嘉泰姆	Function DescriptionhEt嘉泰姆
1hEt嘉泰姆	SRChEt嘉泰姆	SRChEt嘉泰姆	SRChEt嘉泰姆	Switch Input. Source of the internal high-voltage P-channel MOSFET. BypasshEt嘉泰姆 SRC to PGND with a minimum of 0.1μF capacitor closed to the pins.hEt嘉泰姆
2hEt嘉泰姆	REFhEt嘉泰姆	REFhEt嘉泰姆	REFhEt嘉泰姆	Reference voltage output. Bypass REF to AGND with a minimum ofhEt嘉泰姆 0.22μFcapacitor closed to the pins.hEt嘉泰姆
3hEt嘉泰姆	AGNDhEt嘉泰姆	AGNDhEt嘉泰姆	AGNDhEt嘉泰姆	Analog Ground for Step-Up Regulator and Linear Regulators. Connect tohEt嘉泰姆 power ground (PGND) underneath the IC.hEt嘉泰姆
4hEt嘉泰姆	PGNDhEt嘉泰姆	PGNDhEt嘉泰姆	PGNDhEt嘉泰姆	Power Ground for Step-Up Regulator. PGND is the source of the main step-uphEt嘉泰姆 n-channel power MOSFET. Connect PGND to the ground terminals of outputhEt嘉泰姆 capacitors through a short, wide PC board trace. Connect to analog groundhEt嘉泰姆 (AGND) underneath the IC.hEt嘉泰姆
5hEt嘉泰姆	OUT1hEt嘉泰姆	OUT1hEt嘉泰姆	OUT1hEt嘉泰姆	Output of Operational-Amplifier 1hEt嘉泰姆
6hEt嘉泰姆	NEG1hEt嘉泰姆	NEG1hEt嘉泰姆	NEG1hEt嘉泰姆	Inverting Input of Operational-Amplifier 1hEt嘉泰姆
7hEt嘉泰姆	POS1hEt嘉泰姆	POS1hEt嘉泰姆	POS1hEt嘉泰姆	Non-inverting Input of Operational-Amplifier 1hEt嘉泰姆
8hEt嘉泰姆	NChEt嘉泰姆	OUT2hEt嘉泰姆	OUT2hEt嘉泰姆	Output of Operational-Amplifier 2 of CXSU63137/CXSU63137. No internalhEt嘉泰姆 connected of CXSU63137.hEt嘉泰姆
9hEt嘉泰姆	NChEt嘉泰姆	NEG2hEt嘉泰姆	NEG2hEt嘉泰姆	Inverting Input of Operational-Amplifier 2 of CXSU63137/CXSU63137. No internalhEt嘉泰姆 connected of CXSU63137.hEt嘉泰姆
10hEt嘉泰姆	IChEt嘉泰姆	POS2hEt嘉泰姆	POS2hEt嘉泰姆	Non-inverting Input of Operational-Amplifier 2 of CXSU63137/CXSU63137. InternalhEt嘉泰姆 connected to GND of CXSU63137hEt嘉泰姆
11hEt嘉泰姆	BGNDhEt嘉泰姆	BGNDhEt嘉泰姆	BGNDhEt嘉泰姆	Analog Ground for Operational Amplifiers. Connect to power ground (PGND)hEt嘉泰姆 underneath the IC.hEt嘉泰姆
12hEt嘉泰姆	NChEt嘉泰姆	NChEt嘉泰姆	POS3hEt嘉泰姆	Non-inverting Input of Operational-Amplifier 3 of CXSU63137. No internalhEt嘉泰姆 connected of CXSU63137/CXSU63137.hEt嘉泰姆
13hEt嘉泰姆	NChEt嘉泰姆	NChEt嘉泰姆	OUT3hEt嘉泰姆	Output of Operational-Amplifier 3 of CXSU63137. No internal connected of CXSU63137/CXSU63137.hEt嘉泰姆
14hEt嘉泰姆	SUPhEt嘉泰姆	SUPhEt嘉泰姆	SUPhEt嘉泰姆	Power Input of Operational Amplifiers. Typically connected to VMAIN. BypasshEt嘉泰姆 SUP to BGND with a 0.1μF capacitor.hEt嘉泰姆
15hEt嘉泰姆	NChEt嘉泰姆	POS3hEt嘉泰姆	POS4hEt嘉泰姆	Non-inverting Input of Operational-Amplifier 4 of CXSU63137. Non-invertinghEt嘉泰姆 Input of Operational-Amplifier 3 of CXSU63137. No internal connected of CXSU63137.hEt嘉泰姆
16hEt嘉泰姆	NChEt嘉泰姆	NEG3hEt嘉泰姆	NEG4hEt嘉泰姆	Inverting Input of Operational-Amplifier 4 of CXSU63137. Inverting Input ofhEt嘉泰姆 Operational-Amplifier 3 of CXSU63137. No internal connected of CXSU63137.hEt嘉泰姆
17hEt嘉泰姆	NChEt嘉泰姆	OUT3hEt嘉泰姆	OUT4hEt嘉泰姆	Output of Operational-Amplifier 4 of CXSU63137. Output ofhEt嘉泰姆 Operational-Amplifier 3 of CXSU63137. No internal connected of CXSU63137.hEt嘉泰姆
18hEt嘉泰姆	IChEt嘉泰姆	IChEt嘉泰姆	POS5hEt嘉泰姆	Non-inverting Input of Operational-Amplifier 5 of CXSU63137. Internal connectedhEt嘉泰姆 to GND of CXSU63137/CXSU63137.hEt嘉泰姆
19hEt嘉泰姆	NChEt嘉泰姆	NChEt嘉泰姆	NEG5hEt嘉泰姆	Inverting Input of Operational-Amplifier 5 of CXSU63137. No internal connectedhEt嘉泰姆 of CXSU63137/CXSU63137.hEt嘉泰姆
20hEt嘉泰姆	NChEt嘉泰姆	NChEt嘉泰姆	OUT5hEt嘉泰姆	Output of Operational-Amplifier 5 of CXSU63137. No internal connected of CXSU63137/CXSU63137.hEt嘉泰姆
21hEt嘉泰姆	LXhEt嘉泰姆	LXhEt嘉泰姆	LXhEt嘉泰姆	N-Channel Power MOSFET Drain and Switching Node. Connect the inductorhEt嘉泰姆 and Schottky diode to LX and minimize the trace area for lowest EMI.hEt嘉泰姆
22hEt嘉泰姆	INhEt嘉泰姆	INhEt嘉泰姆	INhEt嘉泰姆	Supply Voltage Input. Bypass IN to AGND with a 0.1μF capacitor. IN can rangehEt嘉泰姆 from 2.6V to 6.5V.hEt嘉泰姆
23hEt嘉泰姆	FBhEt嘉泰姆	FBhEt嘉泰姆	FBhEt嘉泰姆	Step-Up Regulator Feedback Input. Connect a resistive voltage-divider fromhEt嘉泰姆 the output (VMAIN) to FB to analog ground (AGND). Place the divider withinhEt嘉泰姆 5mm of FB.hEt嘉泰姆
24hEt嘉泰姆	COMPhEt嘉泰姆	COMPhEt嘉泰姆	COMPhEt嘉泰姆	Step-Up Regulator Error-Amplifier Compensation Point. Connect a series RChEt嘉泰姆 from COMP to AGND.hEt嘉泰姆

PinFunction DescriptionhEt嘉泰姆

PinhEt嘉泰姆	NamehEt嘉泰姆			Function DescriptionhEt嘉泰姆
PinhEt嘉泰姆	CXSU63137hEt嘉泰姆	CXSU63137-1hEt嘉泰姆	CXSU63137-2hEt嘉泰姆	Function DescriptionhEt嘉泰姆
24hEt嘉泰姆	COMPhEt嘉泰姆	COMPhEt嘉泰姆	COMPhEt嘉泰姆	Step-Up Regulator Error-Amplifier Compensation Point. Connect a series RChEt嘉泰姆 from COMP to AGND.hEt嘉泰姆
25hEt嘉泰姆	FBPhEt嘉泰姆	FBPhEt嘉泰姆	FBPhEt嘉泰姆	Gate-On Linear-Regulator Feedback Input. Connect FBP to the center of ahEt嘉泰姆 resistive voltage-divider between the regulator output and AGND to set thehEt嘉泰姆 gate-on linear regulator output voltage. Place the resistive voltage-dividerhEt嘉泰姆 close to the pin.hEt嘉泰姆
26hEt嘉泰姆	DRVPhEt嘉泰姆	DRVPhEt嘉泰姆	DRVPhEt嘉泰姆	Gate-On Linear-Regulator Base Drive. Open drain of an internal n-channelhEt嘉泰姆 MOSFET. Connect DRVP to the base of an external PNP pass transistor.hEt嘉泰姆
27hEt嘉泰姆	FBNhEt嘉泰姆	FBNhEt嘉泰姆	FBNhEt嘉泰姆	Gate-Off Linear-Regulator Feedback Input. Connect FBN to the center of ahEt嘉泰姆 resistive voltage-divider between the regulator output and REF to set thehEt嘉泰姆 gate-off linear regulator output voltage. Place the resistive voltage-dividerhEt嘉泰姆 close to the pin.hEt嘉泰姆
28hEt嘉泰姆	DRVNhEt嘉泰姆	DRVNhEt嘉泰姆	DRVNhEt嘉泰姆	Gate-Off Linear-Regulator Base Drive. Open drain of an internal p-channelhEt嘉泰姆 MOSFET. Connect DRVN to the base of an external NPN pass transistor.hEt嘉泰姆
29hEt嘉泰姆	DELhEt嘉泰姆	DELhEt嘉泰姆	DELhEt嘉泰姆	High-Voltage Switch Delay Input. Connect a capacitor from DEL to AGND tohEt嘉泰姆 set the high-voltage switch startup delay.hEt嘉泰姆
30hEt嘉泰姆	CTLhEt嘉泰姆	CTLhEt嘉泰姆	CTLhEt嘉泰姆	High-Voltage Switch Control Input. When CTL is high, the high-voltage switchhEt嘉泰姆 between COM and SRC is on and the high-voltage switch between COM andhEt嘉泰姆 DRN is off. When CTL is low, the high-voltage switch between COM and SRChEt嘉泰姆 is off and the high-voltage switch between COM and DRN is on. CTL ishEt嘉泰姆 inhibited by the undervoltage lockout and when the voltage on DEL is less thanhEt嘉泰姆 1.25V.hEt嘉泰姆
31hEt嘉泰姆	DRNhEt嘉泰姆	DRNhEt嘉泰姆	DRNhEt嘉泰姆	Switch Input. Drain of the internal high-voltage back-to-back P-channelhEt嘉泰姆 MOSFETs connected to COM. Do not allows the voltage on DRN to exceedhEt嘉泰姆 VSRC.hEt嘉泰姆
32hEt嘉泰姆	COMhEt嘉泰姆	COMhEt嘉泰姆	COMhEt嘉泰姆	Internal High-Voltage MOSFET Switch Common Terminal. Do not allow thehEt嘉泰姆 voltage on COM to exceed VSRC.hEt嘉泰姆

六.电路原理图hEt嘉泰姆
七,功能概述hEt嘉泰姆
For all switching power supplies, the layout is an impor-tant step in the design; especially at high peak currents and switching frequencies. There are some general guidelines for layout:hEt嘉泰姆
1.Place the external power components (the input capacitors, output capacitors, boost inductor and output diodes, etc.) in close proximity to the device.Traces to these components should be kept as short and wide as possible to minimize parasitic inductance and resistance.hEt嘉泰姆
2.Place the REF and IN bypass capacitors close to the pins. The ground connection of the IN bypass capacitor should be connected directly to the AGND pin with a wide trace.hEt嘉泰姆
3.Create a power ground (PGND) and a signal ground island and connect at only one point. The power ground consisting of the input and output capacitor grounds, PGND pin, and any charge-pump components. Connect all of these together with short, wide traces or a small ground plane. Maxi-mizing the width of the power ground traces im-proves efficiency and reduces output voltage ripple and noise spikes. The analog ground plane (AGND) consisting of the AGND pin, all the feed-back-divider ground connections, the operational-amplifier divider ground connections, the COMP and DEL capacitor ground connections, and the device’s exposed backside pad. Connect the AGND and PGND islands by connecting the PGND pin directly to the exposed backside pad. Make no other connections between these separate ground planes.hEt嘉泰姆
4.The feedback network should sense the output volt-age directly from the point of load, and be as far away from LX node as possible.hEt嘉泰姆
5.The exposed die plate, underneath the package,should be soldered to an equivalent area of metal on the PCB. This contact area should have mul-tiple via connections to the back of the PCB as well as connections to intermediate PCB layers, if available, to maximize thermal dissipation away from the IC.hEt嘉泰姆
6.To minimize the thermal resistance of the package when soldered to a multi-layer PCB, the amount of copper track and ground plane area connected to the exposed die plate should be maximized and spread out as far as possible from the IC. The bot-tom and top PCB areas especially should be maxi-mized to allow thermal dissipation to the surround-ing air.hEt嘉泰姆
7.Minimize feedback input track lengths to avoid switching noise pick-uphEt嘉泰姆
八,相关产品hEt嘉泰姆

Switching Regulator > Boost ConverterhEt嘉泰姆
Part_No hEt嘉泰姆	PackagehEt嘉泰姆	Archi-tecture hEt嘉泰姆	Input hEt嘉泰姆 Voltage hEt嘉泰姆		Max Adj.hEt嘉泰姆 Output hEt嘉泰姆 Voltage hEt嘉泰姆		Switch Current Limit (max) hEt嘉泰姆	Fixed hEt嘉泰姆 Output hEt嘉泰姆 Voltage hEt嘉泰姆	Switching hEt嘉泰姆 Frequency hEt嘉泰姆	Internal Power Switch hEt嘉泰姆	Sync. Rectifier hEt嘉泰姆
Part_No hEt嘉泰姆	PackagehEt嘉泰姆		minhEt嘉泰姆	maxhEt嘉泰姆	minhEt嘉泰姆	maxhEt嘉泰姆	(A)hEt嘉泰姆	(V)hEt嘉泰姆	(kHz)hEt嘉泰姆		Sync. Rectifier hEt嘉泰姆
CXSU63133hEt嘉泰姆	SOT89hEt嘉泰姆	VM hEt嘉泰姆	0.9hEt嘉泰姆	5.5hEt嘉泰姆	2.5hEt嘉泰姆	5.5hEt嘉泰姆	0.5hEt嘉泰姆	1.8\|2.6\|2.8\|3hEt嘉泰姆 \|3.3\|3.8\|4.5\|5hEt嘉泰姆	-hEt嘉泰姆	NohEt嘉泰姆	YeshEt嘉泰姆
CXSU63134hEt嘉泰姆	MSOP8\|TSSOP8hEt嘉泰姆 \|SOP8hEt嘉泰姆	VMhEt嘉泰姆	2.5hEt嘉泰姆	5.5hEt嘉泰姆	2.5hEt嘉泰姆	-hEt嘉泰姆	-hEt嘉泰姆	-hEt嘉泰姆	200 ~ 1000hEt嘉泰姆	NohEt嘉泰姆	NohEt嘉泰姆
CXSU63135hEt嘉泰姆	TSSOP8\|SOP-8PhEt嘉泰姆	VMhEt嘉泰姆	1hEt嘉泰姆	5.5hEt嘉泰姆	2.5hEt嘉泰姆	5hEt嘉泰姆	1hEt嘉泰姆	2.5\|3.3hEt嘉泰姆	300hEt嘉泰姆	YeshEt嘉泰姆	YeshEt嘉泰姆
CXSU63136hEt嘉泰姆	SOP8hEt嘉泰姆	CMhEt嘉泰姆	3hEt嘉泰姆	40hEt嘉泰姆	1.25hEt嘉泰姆	40hEt嘉泰姆	1.5hEt嘉泰姆	-hEt嘉泰姆	33 ~ 100hEt嘉泰姆	YeshEt嘉泰姆	NohEt嘉泰姆
CXSU63137hEt嘉泰姆	TQFN5x5-32hEt嘉泰姆	CMhEt嘉泰姆	2.5hEt嘉泰姆	6.5hEt嘉泰姆	2.5hEt嘉泰姆	18hEt嘉泰姆	3hEt嘉泰姆	NohEt嘉泰姆	1200hEt嘉泰姆	YeshEt嘉泰姆	NohEt嘉泰姆
CXSU63138hEt嘉泰姆	TSOT23-5hEt嘉泰姆 TDFN2x2-6hEt嘉泰姆	CMhEt嘉泰姆	2.5hEt嘉泰姆	6hEt嘉泰姆	2.5hEt嘉泰姆	20hEt嘉泰姆	2hEt嘉泰姆	-hEt嘉泰姆	1500hEt嘉泰姆	YeshEt嘉泰姆	NohEt嘉泰姆
CXSU63139hEt嘉泰姆	TQFN4x4-6hEt嘉泰姆 TDFN3x3-12hEt嘉泰姆	CMhEt嘉泰姆	1.8hEt嘉泰姆	5.5hEt嘉泰姆	2.7hEt嘉泰姆	5.5hEt嘉泰姆	5hEt嘉泰姆	-hEt嘉泰姆	1.2hEt嘉泰姆	YeshEt嘉泰姆	YeshEt嘉泰姆
CXSU63140hEt嘉泰姆	SOT23-5hEt嘉泰姆	CMhEt嘉泰姆	2.5hEt嘉泰姆	6hEt嘉泰姆	2.5hEt嘉泰姆	32hEt嘉泰姆	1hEt嘉泰姆	-hEt嘉泰姆	1000hEt嘉泰姆	YeshEt嘉泰姆	NohEt嘉泰姆
CXSU63141hEt嘉泰姆	TSOT-23-6 hEt嘉泰姆 TDFN2x2-8hEt嘉泰姆	CMhEt嘉泰姆	1.2hEt嘉泰姆	5.5hEt嘉泰姆	1.8hEt嘉泰姆	5.5hEt嘉泰姆	1.2hEt嘉泰姆	-hEt嘉泰姆	1.2hEt嘉泰姆	YeshEt嘉泰姆	YeshEt嘉泰姆

hEt嘉泰姆

上一篇：3.0V到40V输入单片控制电路CXSU63136·输出开关电流1.5A内部温度补偿有源限流电路控制占空比振荡器

下一篇：2.7V至6V输入电压CXSU63138固定的开关频率1.5MHz电流模式N沟道MOSFET的升压调节器内置软启动

发表评论

产品中心

电源管理

LED驱动电路

音频放大IC

电机风扇驱动芯片

MCU存储ADC时钟数据线

功率器件

隔离芯片

电池充电芯片

技术支持

产品方案

质量承诺

联系我们