中文
English
The CXPP5450CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
| 产品型号： | CXPP5450CS |
| 产品类型： | MOSFET |
| 产品系列： | N沟道P沟道双极MOSFETs |
| 产品状态： | 量产 |
| 浏览次数： | 48 次 |
产品简介
The CXPP5450CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
技术参数
| 输入电压范围 (VIN) | V ~ VDS(Max):-30V |
|---|---|
| 输出电压 (VOUT) | VGS(th)（V）:-1.9V |
| 封装类型 | SOP-8 |
| Channel type | N沟道P沟道双极MOSFETs |
| Rated voltage | VDS (V)):30 |
| Rated current | VGS(th)(V):1.6 |
| On resistance | 28mΩ |
产品详细介绍
目录
产品概述 返回TOP
The CXPP5450CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
产品特点 返回TOP
N-Channel
VDS =30V, ID =6.5A
RDS(ON) < 30mΩ @ VGS=10V
P-Channel
VDS =-30V, ID = -7A
RDS(ON) < 33mΩ @ VGS=-10V
High power and current handing capability
应用范围 返回TOP
H-bridge
Inverters
技术规格书（产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP 更多同类产品.......
| MOSFET | ||||||||
| Part | N-Channel | P-Channel | Operating | Package | ||||
| number | VDS (V) | RDS(ON) (mΩ) VGS=10V | VGS(th)(V) | VDS (V) | RDS(ON) (mΩ) VGS=-10V | VGS(th)（V） | Temperature(℃) | |
| CXPP5449CS | 30 | 36 | 1.5 | -30 | 69 | -1.6 | -145 | SOT23-6L |
| CXPP5450CS | 30 | 20 | 1.6 | -30 | 28 | -1.9 | -145 | SOP-8 |
| CXPP5451CS | 40 | 15.4 | 1.7 | -40 | 26 | -1.5 | -145 | SOP-8 |
| CXPP5452CS | 60 | 37 | 2 | -60 | 64 | -26 | -145 | SOP-8 |
用户评论