N- and P-Channel Complementary 20V MOSFET CXMS5106 the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications,

N- and P-Channel Complementary, 20V, MOSFET CXMS5106 the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications,

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• 1.产品概述       2.产品特点     

• 3.应用范围       4.技术规格书下载（PDF文档）

• 5.产品封装       6.电路原理图  

• 7.相关产品

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场效应晶体管 >
Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		(L×W)
			(V)	(V)	(V)	(Ω)	(A)		(mm)
CXMS5105	N + P	2	20/-20	±6/±8	0.85/-1.0	0.18/0.085	0.65/-3.1	DFN2020-6L	2.0 x 2.0
CXMS5106	N + P	2	20/-20	±6	0.9/-0.9	0.23/0.52	0.8/-0.59	SOT-363	2.1 x 2.3
CXMS5107	N + P	2	20/-20	±6	0.9/-0.9	0.18/0.45	0.79/-0.5	SOT-563	1.6 x 1.6
CXMS5108	N + P	2	20/-20	±8	1/-1	0.033/0.085	4.4/-2.8	SOT-23-6L	2.9 x 2.8
CXMS5109	N + P	2	12/-12	±8	1.2/-1.2	0.028/-0.057	5.1/-4.0	DFN2020-6L	2.0 x 2.0