CXMS5101B是一种基于P_SUB P_EPI工艺的高压、高速功率MOSFET和IGBT驱动器。浮动通道驱动器可用于独立驱动两个N通道功率MOSFET或IGBT,其工作电压高达120v。逻辑输入与标准CMOS或LSTTL输出兼容,低至3.3V逻辑。输出驱动器具有高脉冲电流缓冲级,设计用于最小驱动器交叉传导。传播延迟被匹配以简化在高频应用中的使用
完全工作至+120 V
3.3v逻辑兼容
为引导操作设计的浮动通道
栅极驱动电源范围为10 V至20 V
输出源/汇电流能力450mA/900mA
独立逻辑输入,以适应所有拓扑
-5V负极Vs能力
两个信道的匹配传播延迟
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[ CXMS5101B ]"
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产品概述 返回TOP
The CXMS5101B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 120 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross -conduction. Propagation delays are matched to simplify use in high frequency applications. It has two versions CXMS5101A & CXMS5101B.
产品特点 返回TOP
z Fully operational to +120 V
z 3.3 V logic compatible
z Floating channel designed for bootstrap operation
z Gate drive supply range from 10 V to 20 V
z Output Source / Sink Current Capability 450mA / 900mA
z Independent Logic Inputs to Accommodate All Topologies
z -5V negative Vs ability
z Matched propagation delay for both channels
应用范围 返回TOP
z Small and medium- power motor driver
z Power MOSFET or IGBT driver
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产品封装图 返回TOP
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半桥输出大功率MOS管/IGBT驱动IC | |||||||||
型号 | 工作电压 | 静态电流 | I/O拉电流 | I/O灌电流 | 上升时间 | 下降时间 | 开延时 | 关延时 | 封装 |
CXMS5101B | 10V-20V/高端工作电压120V | 150uA | 0.45A | 0.9A | 70nS | 60nS | 120nS | 120nS | SOP8 |
CXMS5101 | 11V-30V/高端工作电压100V | 4.5mA | 0.8A | 1A | 400nS | 200nS | 300nS | 400nS | SOP8 |
CXMS5102 | 11V-30V/高端工作电压100V | 4.5mA | 0.8A | 1A | 400nS | 200nS | 300nS | 400nS | SOP8 |
CXMS5102B | 10V-20V/高端工作电压600V | 150uA | 0.3A | 0.6A | 60nS | 35nS | 500nS | 500nS | SOP8 |
CXMS5103 | 10V-20V/高端工作电压600V | 150uA | 0.3A | 0.6A | 90nS | 40nS | 20nS | 20nS | SOP8 |
单通道大功率MOS管/IGBT驱动IC | |||||||||
型号 | 工作电压 | 静态电流 | I/O拉电流 | I/O灌电流 | 上升时间 | 下降时间 | 开延时 | 关延时 | 封装 |
CXMS5104 | 3V-30V | 2mA | 1A | 1.2A | 80nS | 20nS | 200nS | 80nS | SOP8 |