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首页 > 产品中心 > 功率器件 > P沟道MOSFETs >CXCP5371PR采用先进的沟道技术在低至2.5V的栅极电压下提供优良的RDS（ON）低栅极电荷和操作适合用作负载开关或在PWM应用中使用
CXCP5371PR采用先进的沟道技术在低至2.5V的栅极电压下提供优良的RDS（ON）低栅极电荷和操作适合用作负载开关或在PWM应用中使用
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CXCP5371PRThe CXCP5371PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
● VDS = -30V,ID = -5.2A
RDS(ON) < 130mΩ @ VGS=-2.5V
RDS(ON) < 75mΩ @ VGS=-4.5V
RDS(ON) < 65mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package

CXCP5371PR采用先进的沟道技术在低至2.5V的栅极电压下提供优良的RDS（ON）低栅极电荷和操作适合用作负载开关或在PWM应用中使用
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   产品概述 返回TOPH3p嘉泰姆

The CXCP5371PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

   产品特点 返回TOPH3p嘉泰姆

● VDS = -30V,ID = -5.2A H3p嘉泰姆

RDS(ON) < 130mΩ @ VGS=-2.5V H3p嘉泰姆

RDS(ON) < 75mΩ @ VGS=-4.5V H3p嘉泰姆

RDS(ON) < 65mΩ @ VGS=-10V H3p嘉泰姆

● High Power and current handing capability H3p嘉泰姆

● Lead free product is acquired H3p嘉泰姆

● Surface Mount PackageH3p嘉泰姆

   应用范围 返回TOPH3p嘉泰姆

●PWM applications H3p嘉泰姆

●Load switch H3p嘉泰姆

●Power managementH3p嘉泰姆

   技术规格书（产品PDF) 返回TOP H3p嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！H3p嘉泰姆

 QQ截图20160419174301.jpgH3p嘉泰姆

产品封装图 返回TOPH3p嘉泰姆

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电路原理图 返回TOPH3p嘉泰姆

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下一篇▶:CXCP5372 CXCP5372B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications

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  • CXCP5377是P通道逻辑增强型功率场效应晶体管采用高密
  • CXCP5393
  • CXCP5368B
  • CXCP5368 CXCP5368B CXCP5393采用先进的沟道技术提供
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