首页 > 产品中心 > 功率器件 > P沟道MOSFETs >CXMS5162是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计低栅极电荷提供优秀的RDS（ON）适用于DC-DC转换电源开关和充电电路超高密度电池设计高直流电流的优良导通电阻极低阈值电压
CXMS5162是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计低栅极电荷提供优秀的RDS（ON）适用于DC-DC转换电源开关和充电电路超高密度电池设计高直流电流的优良导通电阻极低阈值电压
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CXMS5162是P沟道增强MOS场效应晶体管。采用先进的沟槽技术和设计，以低栅极电荷提供优秀的RDS（ON）。该装置适用于DC-DC转换、电源开关和充电电路。标准产品CXMS5162不含铅和卤素。
沟槽技术
超高密度电池设计
高直流电流的优良导通电阻
极低阈值电压
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[ CXMS5162 ]
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产品简介
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产品概述 返回TOP
The CXMS5162 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5162 is Pb-free and Halogen-free.
产品特点 返回TOP
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23 App
应用范围 返回TOP
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging SO
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| 场效应晶体管 P沟道MOS管 | |||||||||
| Product | Polarity | Channel | VDS | VGS | VGS(th) | RDS(ON)@VGS=4.5V | ID@TA=25oC | Package | Size |
| (Max.) | (Max.) | (Max.) | (Typ.) | (MAX.) | |||||
| (V) | (V) | (V) | (Ω) | (A) | (mm)(L×W) | ||||
| CXMS5151 | P | 1 | -20 | ±8 | -1 | 0.11 | -1.4 | SOT-323 | 2.1 x 2.3 |
| CXMS5152 | P | 1 | -12 | ±12 | -0.9 | 0.022 | -5.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5153 | P | 1 | -12 | ±8 | -0.9 | 0.031 | -3.5 | SOT-23 | 2.9 x 2.4 |
| CXMS5154 | P | 1 | -12 | ±8 | -1 | 0.015 | -7.4 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5155 | P | 1 | -12 | ±8 | -0.9 | 0.08 | -1.5 | SOT-323 | 2.1 x 2.3 |
| CXMS5156 | P+Diode | 1 | -20 | ±8 | -0.8 | - | -2.9 | DFN3020-8L | 3.0 x 2.0 |
| CXMS5156B | P+Diode | 1 | -20 | ±8 | -0.8 | - | -2.7 | DFN3020-8L | 3.0 x 2.0 |
| CXMS5157 | P+Diode | 1 | -20 | ±8 | -1 | 0.09 | -3 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5158D | P | 1 | -20 | ±12 | -1 | 0.042 | -4 | DFN3030-8L | 3.0 x 3.0 |
| CXMS5159 | P | 1 | -20 | ±8 | -0.9 | 0.05 | -4.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5160 | P | 1 | -20 | ±8 | -0.8 | 0.081 | -2.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5161 | P | 1 | -20 | ±5 | -0.9 | 0.48 | -0.62 | SOT-523 | 1.6 x 1.6 |
| CXMS5162 | P | 1 | -20 | ±12 | -1 | 0.056 | -2.9 | SOT-23 | 2.9 x 2.4 |
| CXMS5163 | P | 1 | -20 | ±5 | -0.8 | 0.495 | -0.6 | SOT-723 | 1.2 x 1.2 |
| CXMS5164 | P | 1 | -20 | ±12 | -1 | 0.047 | -3.3 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5165 | P | 1 | -20 | ±12 | -1 | 0.096 | -2.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5166 | P | 1 | -20 | ±5 | -0.9 | - | -0.51 | DFN1006-3L | 1.0 x 0.6 |
| CXMS5166B | P | 1 | -20 | ±5 | -0.9 | 0.44 | -0.51 | DFN1006-3L | 1.0 x 0.6 |
| CXMS5167 | P | 1 | -20 | ±8 | -1 | 0.017 | -6.2 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5168 | P | 1 | -20 | ±12 | -1 | 0.043 | -4 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5169 | P | 1 | -20 | ±12 | -1 | 0.043 | -3.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5170 | P | 1 | -20 | ±8 | -1 | 0.081 | -2.4 | SOT-23 | 2.9 x 2.4 |
| CXMS5171 | P | 1 | -20 | ±8 | -1 | 0.052 | -3.5 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5171A | P | 1 | -20 | ±12 | -1 | 0.052 | -3.5 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5172 | P | 1 | -30 | ±20 | -2.5 | 0.079 | -3.8 | SOP-8L | 4.9 x 6.0 |
| CXMS5173 | P | 1 | -30 | ±20 | -2.5 | 0.083 | -4.1 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5174 | P | 1 | -30 | ±20 | -2.5 | 0.08 | -2.9 | SOT-23 | 2.9 x 2.4 |
| CXMS5175 | P | 1 | -30 | ±20 | -2.5 | 0.077 | -3.1 | SOT-23 | 2.9 x 2.4 |
| CXMS5176 | P | 1 | -30 | ±12 | -1.5 | 0.043 | -4.6 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5177 | P | 1 | -30 | ±20 | -3 | 0.053 | -3.7 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5178 | Dual P | 2 | -30 | ±12 | -1.4 | 0.045 | -5.6 | SOP-8L | 4.9 x 6.0 |
| CXMS5179 | Dual P | 2 | -30 | ±20 | -3 | 0.053 | -5.5 | SOP-8L | 4.9 x 6.0 |
| CXMS5180 | P | 1 | -50 | ±20 | -2 | 3.5 | -0.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5181 | P | 1 | -20 | ±12 | -1 | 0.025 | -5.7 | SOT-23-3 | 2.9 x 2.8 |
| CXMS5182 | P | 1 | -30 | ±20 | -3 | 0.053 | -5.5 | SOP-8L | 4.9 x 6.0 |
| CXMS5182A | P | 1 | -30 | ±20 | -3 | 0.043 | -5.4 | SOP-8L | 4.9 x 6.0 |
| CXMS5183 | Dual P | 2 | -20 | ±8 | -1 | 0.09 | -3 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5184 | Dual P | 2 | -20 | ±12 | -1 | 0.075 | -3.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5185 | Dual P | 2 | -20 | ±12 | -1 | 0.052 | -3.7 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5186 | Dual P | 2 | -20 | ±6 | -0.9 | 0.55 | -0.56 | SOT-563 | 1.6 x 1.6 |
| CXMS5187 | Dual P | 2 | -20 | ±12 | -2.5 | 0.07 | -3.6 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5188 | Dual P | 2 | -20 | ±12 | -2.5 | 0.07 | -4.6 | SOP-8L | 4.9 x 6.0 |
| CXMS5189 | Dual P | 2 | -20 | ±10 | -1 | 0.08 | -3.3 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5190 | Dual P | 2 | -30 | ±20 | -2.5 | 0.07 | -3.8 | SOP-8L | 4.9 x 6.0 |
◀ 上一篇:CXMS5161高直流电流的优良导通电阻极低阈值电压是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计以低栅极电荷提供优秀的RDS（ON）适用于DC-DC转换电源开关和充电电路
下一篇▶:CXMS5163超高密度电池设计高直流电流的优良导通电阻极低阈值电压是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计低栅极电荷提供优秀的RDS ON适用于DC-DC转换电源开关和充电电路
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