N-Channel, 30V, 6.2A, Power MOSFET CXMS5122,This device is suitable for use in DC-DC conversion Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in

首页 > 产品中心 > 功率器件 > N沟道MOSFETs >N-Channel, 30V, 6.2A, Power MOSFET CXMS5122,This device is suitable for use in DC-DC conversion Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in

The CXMS5122 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5122 is Pb-free.
 Trench Technology
 Supper high density cell design
 Excellent ON resistance
 Extremely Low Threshold Voltage

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[ CXMS5122 ]

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目录LP2嘉泰姆

1.产品概述 2.产品特点 3.应用范围 4.技术规格书下载（PDF文档）LP2嘉泰姆

5.产品封装 6.电路原理图 7.相关产品LP2嘉泰姆

一.产品概述LP2嘉泰姆

二.产品特点LP2嘉泰姆

 Trench TechnologyLP2嘉泰姆

 Supper high density cell designLP2嘉泰姆

 Excellent ON resistanceLP2嘉泰姆

 Extremely Low Threshold VoltageLP2嘉泰姆

 Small package DFN2x2-6LLP2嘉泰姆

三.应用范围LP2嘉泰姆

 DC/DC convertersLP2嘉泰姆

 Power supply converters circuitLP2嘉泰姆

 Load/Power Switching for portable device LP2嘉泰姆

四.技术规格书（产品PDF)LP2嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！LP2嘉泰姆

LP2嘉泰姆

五.产品封装图LP2嘉泰姆

LP2嘉泰姆

六.电路原理图LP2嘉泰姆

LP2嘉泰姆

七.相关芯片选择指南更多同类产品......LP2嘉泰姆

场效应晶体管 N沟道MOS管
Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		Size
			(V)	(V)	(V)	(Ω)	(A)		(mm)(L×W)
CX380N60T	N	1	600	±30	4.5	0.36	10.6	TO-220	22 x 10
CX380N60TF	N	1	600	±30	4.5	0.36	10.6	TO-220F	29 x 10
CX380N60TG	N	1	600	±30	4.5	0.36	10.6	TO-252E-2	10 x 6.6
CX470N60T	N	1	600	±30	4.5	0.42	9.4	TO-220	22 x 10
CX470N60TF	N	1	600	±30	4.5	0.42	9.4	TO-220F	29 x 10
CX650N60T	N	1	600	±30	4.5	0.55	7.3	TO-220	22 x 10
CX650N60TF	N	1	600	±30	4.5	0.55	7.3	TO-220F	29 x 10
CX650N60TG	N	1	600	±30	4.5	0.55	7.3	TO-252E-2	10 x 6.6
CX650N60TN	N	1	600	±30	4.5	0.55	7.3	TO-251(IPAK)	15.4 x 6.6
CX01N10	N	1	100	±20	2.5	0.255	1.7	SOT-23	2.9 x 2.4
CX01N11	N	1	110	±20	2.5	0.25	1.8	SOT-23-6L	2.9 x 2.8
CX07N60	N	1	600	±30	5	1	7	TO-220	22 x 10
CX07N60F	N	1	600	±30	5	1	7	TO-220F	29 x 10
CX07N65	N	1	650	±30	5	1.05	7	TO-220	22 x 10
CX07N65F	N	1	650	±30	5	1	7	TO-220F	29 x 10
CX12N65	N	1	650	±30	5	0.57	12	TO-220	22 x 10
CX12N65F	N	1	650	±30	5	0.57	12	TO-220F	29 x 10
CXMS5110	N	1	20	±8	1	0.04	3.2	SOT-23	2.9 x 2.4
CXMS5111	N	1	20	±6	0.85	0.22	0.9	SOT-23	2.9 x 2.4
CXMS5112	N	1	20	±6	0.85	0.22	0.89	SOT-323	2.1 x 2.3
CXMS5113	N	1	20	±8	1	0.027	3.9	SOT-23	2.9 x 2.4
CXMS5114	N	1	20	±6	1	0.21	0.95	SOT-723	1.2 x 1.2
CXMS5115	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5115B	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5116	N	1	20	±5	0.85	0.22	0.66	DFN1006-3L	1.0 x 0.6
CXMS5117	N	1	20	±10	1	0.42	0.54	SOT-723	1.2 x 1.2
CXMS5118	N	1	30	±20	3	0.043	4	SOT-23	2.9 x 2.4
CXMS5119	N	1	30	±20	2	0.057	3.1	SOT-23	2.9 x 2.4
CXMS5120	N	1	30	±20	3	0.039	5.7	SOT-23-6L	2.9 x 2.8
CXMS5121	N	1	30	±20	1.5	1.3	0.25	SOT-723	1.2 x 1.2
CXMS5122	N	1	30	20	2	0.025	5.7	DFN2020-6L	2.0 x 2.0
CXMS5123	N	1	30	±20	1.5	1.3	0.25	SOT-323	2.1 x 2.3
CXMS5124	N	1	30	±20	1.5	1.3	0.25	SOT-523	1.6 x 1.6
CXMS5125	N	1	20	±6	1	0.41	0.8	SOT-523	1.6 x 1.6
CXMS5126	N	1	20	±6	1	1.65	0.6	SOT-523	1.6 x 1.6
CXMS5127	N	1	45	±20	1.5	0.142	1.7	SOT-23	2.9 x 2.4
CXMS5128	N	1	20	±6	1	0.22	0.88	SOT-523	1.6 x 1.6
CXMS5129	N	1	60	±20	2	1.7	0.5	SOT-23	2.9 x 2.4
CXMS5130	N	1	60	±20	2	1.7	0.3	SOT-323	2.1 x 2.3
CXMS5131	N	2	20	±12	1	0.42	0.56	SOT-363	2.1 x 2.3
CXMS5132	Dual N	2	20	±6	0.85	0.22	0.89	SOT-363	2.1 x 2.3
CXMS5133	Dual N	2	20	±6	0.85	0.22	0.88	SOT-563	1.6 x 1.6
CXMS5134	Dual N	2	20	±10	1	0.0148	7	TSSOP-8L	3 x 6.4
CXMS5135	Dual N	2	20	±10	1	0.0157	6.3	SOT-23-6L	2.9 x 2.8
CXMS5136	Dual N	2	20	±10	1	0.016	4.8	PDFN2.9x2.8-8L	2.9 x 2.8
CXMS5137	Dual N	2	60	±20	2	1.7	0.32	SOT-363	2.1 x 2.3
CXMS5138	Dual N	2	20	±10	1	0.022	5	SOT-23-6L	2.9 x 2.8
CXMS5139	N	2	20	±10	1	0.016	6.3	SOT-23-6	2.92 x 2.8
CXMS5140	Dual N	2	20	±10	1	0.022	5.1	TSSOP-8L	3 x 6.4
CXMS5141	Dual N	2	20	±12	1	0.018	6	WLCSP-4L	1.47 x 1.47
CXMS5142	Dual N	2	20	±10	1	0.015	7	TSSOP-8L	3 x 6.4
CXMS5143	Dual N	2	20	±12	1	0.013	6	WLCSP-4L	1.47 x 1.47
CXMS5144	Dual N	2	12	±10	1.2	0.0095	6	WLCSP-4L	1.47 x 1.47
CXMS5145	Dual N	2	20	±10	1	0.055	2.6	SOT-23-6L	2.9 x 2.8
CXMS5146	Dual N	2	20	±12	1	0.012	6	DFN2020-4L	2.0 x 2.0
CXMS5147	Dual N	2	20	±10	1	0.0175	6.3	TSOT-23-6L	2.9 x 2.8
CXMS5148	N	2	20	±10	1	0.0095	11	PDFN3x3-8L	2.9 x 2.8
CXMS5149	Dual N	2	30	±20	2.2	0.033	6.8	SOP-8L	4.9 x 6.0
CXMS5150	Dual N	2	60	±20	2	1.7	0.3	SOT-563	1.6 x 1.6

◀ 上一篇:The CXMS5121 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

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下一篇▶:CXMS5123是N沟道增强MOS场效应晶体管采用沟槽技术和设计低栅极电荷提供优秀的RDS（ON）适用于小信号开关极低阈值电压

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The CXMS5121 is N-Channel enhancement MOS Field Ef CXMS5120低栅极电荷提供优秀的RDS（ON）N沟道增强MOS场效 CXMS5119采用先进的沟槽技术和设计以低栅极电荷提供优 CXMS5118是N沟道增强MOS场效应晶体管采用沟槽技术和设 CXMS5117是N沟道增强MOS场效应晶体管采用沟槽技术和设 CXMS5116是N沟道增强MOS场效应晶体管采用沟槽技术和设 CXMS5115B CXMS5115低栅极电荷提供RDS（ON）N沟道增强MOS场效应晶体 CXMS5114低栅极电荷提供优秀的RDS（ON）用于DC-DC转换电源 CXMS5113是N沟道增强MOS场效应晶体管采用沟槽技术和设

The CXMS5121 is N-Channel enhancement MOS Field Ef

CXMS5120低栅极电荷提供优秀的RDS（ON）N沟道增强MOS场效

CXMS5119采用先进的沟槽技术和设计以低栅极电荷提供优

CXMS5118是N沟道增强MOS场效应晶体管采用沟槽技术和设

CXMS5117是N沟道增强MOS场效应晶体管采用沟槽技术和设

CXMS5116是N沟道增强MOS场效应晶体管采用沟槽技术和设

CXMS5115B

CXMS5115低栅极电荷提供RDS（ON）N沟道增强MOS场效应晶体

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