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首页 > 产品中心 > 电源管理 > DC降压型转换器 > Buck降压型芯片 >CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V
CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V
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CXSD62104集成了双降压、恒定时间、同步PWM控制器(为每个通道驱动双N通道mosfet)和
两个低损耗稳压器以及各种保护装置集成到一个芯片中。PWM控制器降低电池的高电压以产生NB的低电压应用。PWM1和PWM2的输出可以从2V调整到5.5V通过设置一个从VOUTx到GND的电阻分压器。线性调节器为备用电源提供5V和3.3V输出

CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V
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产品简介

目录KGH嘉泰姆

1.产品概述                       2.产品特点KGH嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 KGH嘉泰姆
5.产品封装图                     6.电路原理图                   KGH嘉泰姆
7.功能概述                        8.相关产品KGH嘉泰姆

一,产品概述(General Description)         KGH嘉泰姆

        The CXSD62104  integrates dual step-down, constant-ontime, synchronousKGH嘉泰姆

PWM controllers (that drives dual N-channel MOSFETs for each channel) andKGH嘉泰姆
two low drop-out regulators as well as various protections into a chip.The PWMKGH嘉泰姆
controllers step down high voltage of a battery to generate low-voltage for NBKGH嘉泰姆
applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5VKGH嘉泰姆
by setting a resistive voltage-divider from VOUTx to GND.The linear regulatorsKGH嘉泰姆
provide 5V and 3.3V output for standby power supply. The linear regulatorsKGH嘉泰姆

provide up to 100mA output current. When the PWMx output voltage is higher KGH嘉泰姆

than LDOx bypass threshold, the related LDOx regulator is shut off and its KGH嘉泰姆

output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation.KGH嘉泰姆
     The CXSD62104 provides excellent transient response and accurate DC KGH嘉泰姆

output voltage in either PFM or PWM Mode.In Pulse-Frequency Mode (PFM), KGH嘉泰姆

the CXSD62104 provides very high efficiency over light to heavy loads with KGH嘉泰姆

loading-modulated switching frequencies. The Forced-PWM mode works nearly KGH嘉泰姆

at constant frequency for low-noise requirements. The unique ultrasonic modeKGH嘉泰姆

 maintains the switching frequency above 25KHz, which eliminates noise in audio applications.KGH嘉泰姆

     The CXSD62104 is equipped with accurate sourcing cur-rent-limit, outputKGH嘉泰姆

under-voltage and output over-voltage protections, being perfect for NB KGH嘉泰姆

applications. A 1.7ms (typ.) digital soft-start can reduce the start-up current. KGH嘉泰姆

A soft-stop function actively discharges the output capaci-tors by the discharge KGH嘉泰姆

device. The CXSD62104 has individual enable controls for PWM channels and KGH嘉泰姆

LDOs. Pulling both ENPWM pin and ENLDO pin low shuts down the whole chipKGH嘉泰姆

with low quiescent current close to zero.KGH嘉泰姆
      The CXSD62104 is available in a TQFN4x4-24A package.KGH嘉泰姆
二.产品特点(Features)KGH嘉泰姆
Wide Input Voltage Range from 6V to 25VKGH嘉泰姆
Provide 4 Independent Outputs with ±1.5% Accu-KGH嘉泰姆
racy Over-TemperatureKGH嘉泰姆
- PWM1 Controller with Adjustable (2V to 5.5V) Out-putKGH嘉泰姆
PWM2 Controller with Adjustable (2V to 5.5V) Out-putKGH嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V OutputKGH嘉泰姆
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V OutputKGH嘉泰姆
Excellent Line/Load Regulations about ±1.5% Over-Temperature RangeKGH嘉泰姆
±1%, (±1.5%, 50μA) 2.0V Reference Voltage OutputKGH嘉泰姆
Built-In POR Control Scheme ImplementedKGH嘉泰姆
Selectable Forced-PWM or Automatic PFM/PWMKGH嘉泰姆
(with Selectable Ultrasonic Operation)KGH嘉泰姆
Constant-On-Time Control Scheme with FrequencyKGH嘉泰姆
Compensation for PWM ModeKGH嘉泰姆
Selectable Switching Frequency in PWM ModeKGH嘉泰姆
Built-in Digital Soft-Start for PWM Outputs and Soft-KGH嘉泰姆
Stop for PWM Outputs and LDO OutputsKGH嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETKGH嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)KGH嘉泰姆
Built-in Power Good Indicators (PWMs)KGH嘉泰姆
Independent Enable Inputs (PWMs, LDO)KGH嘉泰姆

70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)KGH嘉泰姆

Adjustable Current-Limit Protection (PWMs)KGH嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)KGH嘉泰姆
Over-Temperature ProtectionKGH嘉泰姆
4mmx4mm Thin QFN-24 (TQFN4x4-24A) packageKGH嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)
KGH嘉泰姆

三,应用范围 (Applications)KGH嘉泰姆

Notebook and Sub-Notebook ComputersKGH嘉泰姆

Portable DevicesKGH嘉泰姆
DDR1, DDR2, and DDR3 Power SuppliesKGH嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered DevicesKGH嘉泰姆
Graphic CardsKGH嘉泰姆
Game ConsolesKGH嘉泰姆
Telecommunications
KGH嘉泰姆

四.下载产品资料PDF文档 KGH嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持KGH嘉泰姆

 QQ截图20160419174301.jpgKGH嘉泰姆

五,产品封装图 (Package)KGH嘉泰姆


blob.pngblob.pngKGH嘉泰姆

六.电路原理图KGH嘉泰姆


blob.pngKGH嘉泰姆

七,功能概述KGH嘉泰姆


Input Capacitor SelectionKGH嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, selectKGH嘉泰姆
the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMSKGH嘉泰姆
current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors areKGH嘉泰姆
remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-KGH嘉泰姆
side MOSFET with very low-impeadance PCB layout. KGH嘉泰姆
MOSFET SelectionKGH嘉泰姆
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs shouldKGH嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:KGH嘉泰姆
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFETKGH嘉泰姆
driver will not charge the miller capacitor of this MOSFET.KGH嘉泰姆
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. TheKGH嘉泰姆
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driverKGH嘉泰姆
sinking current path. This results in much less switching loss of the low-side MOSFETs. The dutyKGH嘉泰姆
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-KGH嘉泰姆
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the powerKGH嘉泰姆
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFETKGH嘉泰姆
does not have this zero voltage switching condition, and because it conducts for less timeKGH嘉泰姆
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be givenKGH嘉泰姆
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.KGH嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitanceKGH嘉泰姆
(CRSS) and maximum output current requirement. The losses in the MOSFETs have two components: conduc-KGH嘉泰姆
tion loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximately given byKGH嘉泰姆
the following equations:KGH嘉泰姆
Layout ConsiderationKGH嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.KGH嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike acrossKGH嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionKGH嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,KGH嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasiticKGH嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short andKGH嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. AndKGH嘉泰姆
signal and power grounds are to be kept separating and finally combined to use the ground plane construction orKGH嘉泰姆

single point grounding. The best tie-point between the signal ground and the power ground is at the negativeKGH嘉泰姆
side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are notKGH嘉泰姆
recommended. Below is a checklist for your layout:KGH嘉泰姆
Layout Consideration (Cont.)KGH嘉泰姆
Keep the switching nodes (UGATEx, LGATEx, BOOTx,and PHASEx) away from sensitive small signal nodesKGH嘉泰姆
(REF, ILIMx, and FBx) since these nodes are fast mov-ing signals. Therefore, keep traces to these nodes asKGH嘉泰姆
short as possible and there should be no other weak signal traces in parallel with theses traces on any layer.KGH嘉泰姆

Minimizing the impedance with wide layout plane be-tween the two pads reduces the voltage bounce ofKGH嘉泰姆

CXSD62104KGH嘉泰姆

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CXSD6275KGH嘉泰姆

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2.2KGH嘉泰姆

13.2KGH嘉泰姆

0.8KGH嘉泰姆

5~12KGH嘉泰姆

2100KGH嘉泰姆

CXSD6276AKGH嘉泰姆

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1KGH嘉泰姆

20KGH嘉泰姆

2.2KGH嘉泰姆

13.2KGH嘉泰姆

0.8KGH嘉泰姆

5~12KGH嘉泰姆

2100KGH嘉泰姆

CXSD6277/A/BKGH嘉泰姆

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1KGH嘉泰姆

1KGH嘉泰姆

5KGH嘉泰姆

5KGH嘉泰姆

13.2KGH嘉泰姆

1.25|0.8KGH嘉泰姆

5~12KGH嘉泰姆

3000KGH嘉泰姆

CXSD6278KGH嘉泰姆

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1KGH嘉泰姆

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3.3KGH嘉泰姆

5.5KGH嘉泰姆

0.8KGH嘉泰姆

5KGH嘉泰姆

2100KGH嘉泰姆

CXSD6279BKGH嘉泰姆

SOP-14KGH嘉泰姆

VM   KGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

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13.2KGH嘉泰姆

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SOP14KGH嘉泰姆

QSOP16KGH嘉泰姆

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13.2KGH嘉泰姆

0.8KGH嘉泰姆

5~12KGH嘉泰姆

2500KGH嘉泰姆

CXSD6296A|B|C|DKGH嘉泰姆

SOP8PKGH嘉泰姆

VMKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

25KGH嘉泰姆

3KGH嘉泰姆

13.2KGH嘉泰姆

0.6|0.8KGH嘉泰姆

5~12KGH嘉泰姆

1200KGH嘉泰姆

CXSD6297KGH嘉泰姆

TDFN3x3-10KGH嘉泰姆

VMKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

25KGH嘉泰姆

4KGH嘉泰姆

13.2KGH嘉泰姆

0.8KGH嘉泰姆

5~12KGH嘉泰姆

2000KGH嘉泰姆

CXSD6298KGH嘉泰姆

TDFN3x3-10KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

25KGH嘉泰姆

4.5KGH嘉泰姆

25KGH嘉泰姆

0.6KGH嘉泰姆

5~12KGH嘉泰姆

80KGH嘉泰姆

CXSD6299|AKGH嘉泰姆

SOP-8PKGH嘉泰姆

VMKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

25KGH嘉泰姆

4.5KGH嘉泰姆

13.2KGH嘉泰姆

0.8KGH嘉泰姆

5~12KGH嘉泰姆

16000KGH嘉泰姆

CXSD62100KGH嘉泰姆

TQFN3x3-10KGH嘉泰姆

VMKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

25KGH嘉泰姆

4.5KGH嘉泰姆

13.2KGH嘉泰姆

0.6KGH嘉泰姆

5~12KGH嘉泰姆

2500KGH嘉泰姆

CXSD62101|LKGH嘉泰姆

TDFN3x3-10KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

30KGH嘉泰姆

3KGH嘉泰姆

25KGH嘉泰姆

0.8KGH嘉泰姆

5~12KGH嘉泰姆

2000KGH嘉泰姆

CXSD62102KGH嘉泰姆

TQFN3x3-16KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

30KGH嘉泰姆

1.8KGH嘉泰姆

28KGH嘉泰姆

0.6KGH嘉泰姆

5KGH嘉泰姆

600KGH嘉泰姆

CXSD62102AKGH嘉泰姆

TQFN 3x3 16KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

30KGH嘉泰姆

1.8KGH嘉泰姆

28KGH嘉泰姆

0.6KGH嘉泰姆

5KGH嘉泰姆

600KGH嘉泰姆

CXSD62103KGH嘉泰姆

QFN4x4-24KGH嘉泰姆

VMKGH嘉泰姆

2KGH嘉泰姆

1KGH嘉泰姆

50KGH嘉泰姆

4.5KGH嘉泰姆

13.2KGH嘉泰姆

0.6KGH嘉泰姆

5~12KGH嘉泰姆

5000KGH嘉泰姆

CXSD62104KGH嘉泰姆

TQFN4x4-24KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

15KGH嘉泰姆

6KGH嘉泰姆

25KGH嘉泰姆

2KGH嘉泰姆

NKGH嘉泰姆

550KGH嘉泰姆

CXSD62105KGH嘉泰姆

TQFN4x4-24KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

15KGH嘉泰姆

6KGH嘉泰姆

25KGH嘉泰姆

2KGH嘉泰姆

NKGH嘉泰姆

550KGH嘉泰姆

CXSD62106|AKGH嘉泰姆

TQFN4x4-4KGH嘉泰姆

TQFN3x3-20KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

20KGH嘉泰姆

3KGH嘉泰姆

28KGH嘉泰姆

0.75KGH嘉泰姆

5KGH嘉泰姆

800KGH嘉泰姆

CXSD62107KGH嘉泰姆

TQFN3x3-16KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

20KGH嘉泰姆

1.8KGH嘉泰姆

28KGH嘉泰姆

0.75KGH嘉泰姆

5KGH嘉泰姆

400KGH嘉泰姆

CXSD62108KGH嘉泰姆

QFN3.5x3.5-14KGH嘉泰姆

TQFN3x3-16KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

20KGH嘉泰姆

1.8KGH嘉泰姆

28KGH嘉泰姆

0.75KGH嘉泰姆

5KGH嘉泰姆

400KGH嘉泰姆

CXSD62109KGH嘉泰姆

TQFN3x3-16KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

20KGH嘉泰姆

1.8KGH嘉泰姆

28KGH嘉泰姆

0.75KGH嘉泰姆

5KGH嘉泰姆

400KGH嘉泰姆

CXSD62110KGH嘉泰姆

QFN3x3-20KGH嘉泰姆

TQFN3x3-16KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

20KGH嘉泰姆

3KGH嘉泰姆

28KGH嘉泰姆

1.8|1.5|0.5KGH嘉泰姆

5KGH嘉泰姆

740KGH嘉泰姆

CXSD62111KGH嘉泰姆

TQFN4x4-24KGH嘉泰姆

|QFN3x3-20KGH嘉泰姆

CMKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

15KGH嘉泰姆

5KGH嘉泰姆

28KGH嘉泰姆

0.5KGH嘉泰姆

NKGH嘉泰姆

3000KGH嘉泰姆

CXSD62112KGH嘉泰姆

TDFN3x3-10KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

20KGH嘉泰姆

1.8KGH嘉泰姆

28KGH嘉泰姆

0.5KGH嘉泰姆

5KGH嘉泰姆

250KGH嘉泰姆

CXSD62113|CKGH嘉泰姆

TQFN3x3-20KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

15KGH嘉泰姆

6KGH嘉泰姆

25KGH嘉泰姆

2KGH嘉泰姆

NKGH嘉泰姆

550KGH嘉泰姆

CXSD62113EKGH嘉泰姆

TQFN 3x3 20KGH嘉泰姆

COTKGH嘉泰姆

2KGH嘉泰姆

2KGH嘉泰姆

11KGH嘉泰姆

6KGH嘉泰姆

25KGH嘉泰姆

2KGH嘉泰姆

NKGH嘉泰姆

550KGH嘉泰姆

CXSD62114KGH嘉泰姆

TQFN3x3-20KGH嘉泰姆

COTKGH嘉泰姆

2KGH嘉泰姆

2KGH嘉泰姆

11KGH嘉泰姆

5.5KGH嘉泰姆

25KGH嘉泰姆

2KGH嘉泰姆

NKGH嘉泰姆

280KGH嘉泰姆

CXSD62115KGH嘉泰姆

QFN4x4-24KGH嘉泰姆

VMKGH嘉泰姆

2KGH嘉泰姆

1KGH嘉泰姆

60KGH嘉泰姆

3.1KGH嘉泰姆

13.2KGH嘉泰姆

0.85KGH嘉泰姆

12KGH嘉泰姆

5000KGH嘉泰姆

CXSD62116A|B|CKGH嘉泰姆

SOP-8PKGH嘉泰姆

VMKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

20KGH嘉泰姆

2.9KGH嘉泰姆

13.2KGH嘉泰姆

0.8KGH嘉泰姆

12KGH嘉泰姆

16000KGH嘉泰姆

CXSD62117KGH嘉泰姆

SOP-20KGH嘉泰姆

VMKGH嘉泰姆

2KGH嘉泰姆

2KGH嘉泰姆

30KGH嘉泰姆

10KGH嘉泰姆

13.2KGH嘉泰姆

1KGH嘉泰姆

12KGH嘉泰姆

5000KGH嘉泰姆

CXSD62118KGH嘉泰姆

TDFN3x3-10KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

1KGH嘉泰姆

25KGH嘉泰姆

1.8KGH嘉泰姆

28KGH嘉泰姆

0.7KGH嘉泰姆

5KGH嘉泰姆

250KGH嘉泰姆

CXSD62119KGH嘉泰姆

TQFN3x3-20KGH嘉泰姆

COTKGH嘉泰姆

2KGH嘉泰姆

1KGH嘉泰姆

40KGH嘉泰姆

1.8KGH嘉泰姆

25KGH嘉泰姆

REFIN SettingKGH嘉泰姆

5KGH嘉泰姆

700KGH嘉泰姆

CXSD62120KGH嘉泰姆

QFN 3x3 20KGH嘉泰姆

TQFN 3x3 16KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

20KGH嘉泰姆

3KGH嘉泰姆

28KGH嘉泰姆

1.8|1.5 1.35|1.2 0.5KGH嘉泰姆

5KGH嘉泰姆

800KGH嘉泰姆

CXSD62121AKGH嘉泰姆

TQFN3x3 20KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

15KGH嘉泰姆

3KGH嘉泰姆

28KGH嘉泰姆

0.75KGH嘉泰姆

5KGH嘉泰姆

220KGH嘉泰姆

CXSD62121BKGH嘉泰姆

TQFN3x3 20KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

15KGH嘉泰姆

3KGH嘉泰姆

28KGH嘉泰姆

0.75KGH嘉泰姆

5KGH嘉泰姆

220KGH嘉泰姆

CXSD62121KGH嘉泰姆

TQFN3x3-20KGH嘉泰姆

COTKGH嘉泰姆

1KGH嘉泰姆

2KGH嘉泰姆

20KGH嘉泰姆

3KGH嘉泰姆

28KGH嘉泰姆

0.75KGH嘉泰姆

5KGH嘉泰姆

180KGH嘉泰姆

 KGH嘉泰姆