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首页 > 产品中心 > 电源管理 > DC降压型芯片 > Buck降压型芯片 >CXSD62121A同步buck-PWM控制器来产生VDDQ源极和陷极LDO线性调节器
CXSD62121A同步buck-PWM控制器来产生VDDQ源极和陷极LDO线性调节器
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CXSD62121A在功率因数调制(PFM)或脉冲宽度调制(PWM)模式下提供出色的瞬态响应和准确的直流电压输出

CXSD62121A同步buck-PWM控制器来产生VDDQ源极和陷极LDO线性调节器
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目录gTH嘉泰姆

1.产品概述                       2.产品特点gTH嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 gTH嘉泰姆
5.产品封装图                     6.电路原理图                   gTH嘉泰姆
7.功能概述                        8.相关产品gTH嘉泰姆

一,产品概述(General Description)  gTH嘉泰姆

    The CXSD62121A CXSD62121B CXSD62121 integrates a synchronous buck PWM con-troller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It offers the lowest total solution cost in system where space is at a premium.  The CXSD62121A CXSD62121B CXSD62121 provides excellent transient response and accurate DC voltage output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM), the CXSD62121A CXSD62121B CXSD62121 provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN-20 Package,the Forced PWM Mode works nearly at constant frequency for low-noise requirements.  The CXSD62121A CXSD62121B CXSD62121 is equipped with accurate current-limit,output under-voltage, and output over-voltage protections.A Power-On- Reset function monitors the voltage on VCC prevents wrong operation during power on. Droop func-tion is allowed to adjust output voltage during light load period.The LDO is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current up to 1.5A. It also incorporates current-limit and thermal shutdown protection.The output voltage of LDO tracks the voltage at VREF pin.An internal resistor divider is used to provide a half volt-age of VREF for VTTREF and VTT Voltage. The VTT output voltage is only requiring 20μF of ceramic output capaci tance for stability and fast transient response. The S3 and S5 pins provide the sleep state for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 and S3 are both pulled low the device provides the soft-off for VTT and VTTREF                                                         gTH嘉泰姆

产品特点(Features)gTH嘉泰姆

High Input Voltages Range from 3V to 28V Input PowergTH嘉泰姆
Provide Adjustable Output Voltage from 0.75V togTH嘉泰姆
5.5V +1% Accuracy over TemperaturegTH嘉泰姆
Integrated MOSFET Drivers and Bootstrap Forward P-CH MOSFETgTH嘉泰姆
Low Quiescent Current (200μA)gTH嘉泰姆
Excellent Line and Load Transient ResponsesgTH嘉泰姆
PFM Mode for Increased Light Load EfficiencygTH嘉泰姆
Constant On-Time Controller SchemegTH嘉泰姆
- Switching Frequency Compensation for PWM ModegTH嘉泰姆
- Adjustable Switching Frequency from 100kHz togTH嘉泰姆
550kHz in PWM Mode with DC Output CurrentgTH嘉泰姆
S3 and S5 Pins Control The Device in S0, S3 or S4/S5 StategTH嘉泰姆
Power Good MonitoringgTH嘉泰姆
Extra Droop Voltage Control Function withgTH嘉泰姆
Adjustable Current SettinggTH嘉泰姆
70% Under-Voltage Protection (UVP)gTH嘉泰姆
125% Over-Voltage Protection (OVP)gTH嘉泰姆
Adjustable Current-Limit ProtectiongTH嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)gTH嘉泰姆
TQFN-20 3mmx3mm Thin packagegTH嘉泰姆
Lead Free Available (RoHS Compliant)gTH嘉泰姆
+1.5A LDO Section (VTT)gTH嘉泰姆
Sourcing or Sinking Current up to 1.5AgTH嘉泰姆
Fast Transient Response for Output VoltagegTH嘉泰姆
Output Ceramic Capacitors Support at least 10μMLCCgTH嘉泰姆
VTT and VTTREF Track at Half the VDDQSNS by internal dividergTH嘉泰姆
+20mV Accuracy for VTT and VTTREFgTH嘉泰姆
Independent Over-Current Limit (OCL)gTH嘉泰姆
Thermal Shutdown ProtectiongTH嘉泰姆
三,应用范围 (Applications)gTH嘉泰姆


DDR2, and DDR3 Memory Power SuppliesgTH嘉泰姆
SSTL-2 SSTL-18 and HSTL TerminationgTH嘉泰姆
四.下载产品资料PDF文档 gTH嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持gTH嘉泰姆

 QQ截图20160419174301.jpggTH嘉泰姆

五,产品封装图 (Package)gTH嘉泰姆


blob.pnggTH嘉泰姆
六.电路原理图gTH嘉泰姆


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七,功能概述gTH嘉泰姆


Soft- Start (cont.)gTH嘉泰姆

During soft-start stage before the PGOOD pin is ready,gTH嘉泰姆
the under voltage protection is prohibited. The over volt-gTH嘉泰姆
age and current limit protection functions are enabled. IfgTH嘉泰姆
the output capacitor has residue voltage before startup,gTH嘉泰姆
both low-side and high-side MOSFETs are in off-stategTH嘉泰姆
until the internal digital soft start voltage equal the inter-gTH嘉泰姆
nal feedback voltage. This will ensure the output voltagegTH嘉泰姆
starts from its existing voltage level.gTH嘉泰姆
The VTT LDO part monitors the output current, both sourc-gTH嘉泰姆
ing and sinking current, and limits the maximum outputgTH嘉泰姆
current to prevent damages during current overload orgTH嘉泰姆
short circuit (shorted from VTT to GND or VLDOIN)gTH嘉泰姆
conditions.gTH嘉泰姆
The VTT LDO provides a soft-start function, using thegTH嘉泰姆
constant current to charge the output capacitor that givesgTH嘉泰姆
a rapid and linear output voltage rise. If the load current isgTH嘉泰姆
above the current limit start-up, the VTT cannot startgTH嘉泰姆
successfully.CXSD62121A CXSD62121B CXSD62121 has an independent counter for each output,gTH嘉泰姆
but the PGOOD signal indicates only the status of VDDQgTH嘉泰姆
and does not indicate VTT power good externally.gTH嘉泰姆
Power-Good Output (PGOOD)gTH嘉泰姆
PGOOD is an open-drain output and the PGOOD com-gTH嘉泰姆
parator continuously monitors the output voltage. PGOODgTH嘉泰姆
is actively held low in shutdown, and standby. When PWMgTH嘉泰姆
converter’s output voltage is greater than 95% of its tar-gTH嘉泰姆
get value, the internal open-drain device will be pulledgTH嘉泰姆
low. After 63μs debounce time, the PGOOD goes high.gTH嘉泰姆
The PGOOD goes low if VVDDQ output is 10% below orgTH嘉泰姆
above its nominal regulation point.gTH嘉泰姆
Under Voltage ProtectiongTH嘉泰姆
In the process of operation, if a short-circuit occurs, thegTH嘉泰姆
output voltage will drop quickly. When load current is big-gTH嘉泰姆
ger than current limit threshold value, the output voltagegTH嘉泰姆
will fall out of the required regulation range. The under-gTH嘉泰姆
voltage continually monitors the setting output voltagegTH嘉泰姆
after 2ms of PWM operations to ensure startup. If a loadgTH嘉泰姆
step is strong enough to pull the output voltage lowergTH嘉泰姆
than the under voltage threshold (70% of normal outputgTH嘉泰姆
voltage), CXSD62121A CXSD62121B CXSD62121 shuts down the output gradually andgTH嘉泰姆
latches off both high and low side MOSFETs.gTH嘉泰姆
Over Voltage Protection (OVP)gTH嘉泰姆
The feedback voltage should increase over 125% of thegTH嘉泰姆
reference voltage due to the high-side MOSFET failure orgTH嘉泰姆
for other reasons, and the over voltage protection com-gTH嘉泰姆
parator designed with a 1.5μs noise filter will force thegTH嘉泰姆
low-side MOSFET gate driver to be high. This action ac-gTH嘉泰姆
tively pulls down the output voltage and eventually at-gTH嘉泰姆
tempts to blow the battery fuse.gTH嘉泰姆
When the OVP occurs, the PGOOD pin will pull down andgTH嘉泰姆
latch-off the converter. This OVP scheme only clamps thegTH嘉泰姆
voltage overshoot, and does not invert the output voltagegTH嘉泰姆
when otherwise activated with a continuously high outputgTH嘉泰姆
from low-side MOSFET driver. It’s a common problem forgTH嘉泰姆
OVP schemes with a latch. Once an over-voltage faultgTH嘉泰姆
condition is set, toggling VCC power-on-reset signal cangTH嘉泰姆
only reset it.gTH嘉泰姆
PWM Converter Current LimitgTH嘉泰姆
The current-limit circuit employs a unique “valley” currentgTH嘉泰姆
sensing algorithm (Figure 2). CS pin should be con-gTH嘉泰姆
nected to VCC through the trip voltage-setting resistor,gTH嘉泰姆
RCS. CS terminal sinks 5mA current, ICS, and the currentgTH嘉泰姆
limit threshold is set to the voltage across the RCS. ThegTH嘉泰姆
voltage between or CS_GND pin and PHASE pin moni-gTH嘉泰姆
tors the inductor current so that PHASE pin should begTH嘉泰姆
connected to the drain terminal of the low side MOSFET.gTH嘉泰姆
PGND is used as the positive current sensing node sogTH嘉泰姆
that PGND should be connected to the proper currentgTH嘉泰姆
sensing device, i.e. the sense resistor or the source ter-gTH嘉泰姆
minal of the low side MOSFET.gTH嘉泰姆
If the magnitude of the current-sense signal is above thegTH嘉泰姆
current-limit threshold, the PWM is not allowed to initiategTH嘉泰姆
a new cycle. The actual peak current is greater than thegTH嘉泰姆
current-limit threshold by an amount equal to the induc-gTH嘉泰姆
tor ripple current. Therefore, the exact current- limit char-gTH嘉泰姆
acteristic and maximum load capability are a function ofgTH嘉泰姆
the sense resistance, inductor value, and input voltage.gTH嘉泰姆
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13.2gTH嘉泰姆

0.6|0.8gTH嘉泰姆

5~12gTH嘉泰姆

1200gTH嘉泰姆

CXSD6297gTH嘉泰姆

TDFN3x3-10gTH嘉泰姆

VMgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

25gTH嘉泰姆

4gTH嘉泰姆

13.2gTH嘉泰姆

0.8gTH嘉泰姆

5~12gTH嘉泰姆

2000gTH嘉泰姆

CXSD6298gTH嘉泰姆

TDFN3x3-10gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

25gTH嘉泰姆

4.5gTH嘉泰姆

25gTH嘉泰姆

0.6gTH嘉泰姆

5~12gTH嘉泰姆

80gTH嘉泰姆

CXSD6299|AgTH嘉泰姆

SOP-8PgTH嘉泰姆

VMgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

25gTH嘉泰姆

4.5gTH嘉泰姆

13.2gTH嘉泰姆

0.8gTH嘉泰姆

5~12gTH嘉泰姆

16000gTH嘉泰姆

CXSD62100gTH嘉泰姆

TQFN3x3-10gTH嘉泰姆

VMgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

25gTH嘉泰姆

4.5gTH嘉泰姆

13.2gTH嘉泰姆

0.6gTH嘉泰姆

5~12gTH嘉泰姆

2500gTH嘉泰姆

CXSD62101|LgTH嘉泰姆

TDFN3x3-10gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

30gTH嘉泰姆

3gTH嘉泰姆

25gTH嘉泰姆

0.8gTH嘉泰姆

5~12gTH嘉泰姆

2000gTH嘉泰姆

CXSD62102gTH嘉泰姆

TQFN3x3-16gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

30gTH嘉泰姆

1.8gTH嘉泰姆

28gTH嘉泰姆

0.6gTH嘉泰姆

5gTH嘉泰姆

600gTH嘉泰姆

CXSD62102AgTH嘉泰姆

TQFN 3x3 16gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

30gTH嘉泰姆

1.8gTH嘉泰姆

28gTH嘉泰姆

0.6gTH嘉泰姆

5gTH嘉泰姆

600gTH嘉泰姆

CXSD62103gTH嘉泰姆

QFN4x4-24gTH嘉泰姆

VMgTH嘉泰姆

2gTH嘉泰姆

1gTH嘉泰姆

50gTH嘉泰姆

4.5gTH嘉泰姆

13.2gTH嘉泰姆

0.6gTH嘉泰姆

5~12gTH嘉泰姆

5000gTH嘉泰姆

CXSD62104gTH嘉泰姆

TQFN4x4-24gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

15gTH嘉泰姆

6gTH嘉泰姆

25gTH嘉泰姆

2gTH嘉泰姆

NgTH嘉泰姆

550gTH嘉泰姆

CXSD62105gTH嘉泰姆

TQFN4x4-24gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

15gTH嘉泰姆

6gTH嘉泰姆

25gTH嘉泰姆

2gTH嘉泰姆

NgTH嘉泰姆

550gTH嘉泰姆

CXSD62106|AgTH嘉泰姆

TQFN4x4-4gTH嘉泰姆

TQFN3x3-20gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

20gTH嘉泰姆

3gTH嘉泰姆

28gTH嘉泰姆

0.75gTH嘉泰姆

5gTH嘉泰姆

800gTH嘉泰姆

CXSD62107gTH嘉泰姆

TQFN3x3-16gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

20gTH嘉泰姆

1.8gTH嘉泰姆

28gTH嘉泰姆

0.75gTH嘉泰姆

5gTH嘉泰姆

400gTH嘉泰姆

CXSD62108gTH嘉泰姆

QFN3.5x3.5-14gTH嘉泰姆

TQFN3x3-16gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

20gTH嘉泰姆

1.8gTH嘉泰姆

28gTH嘉泰姆

0.75gTH嘉泰姆

5gTH嘉泰姆

400gTH嘉泰姆

CXSD62109gTH嘉泰姆

TQFN3x3-16gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

20gTH嘉泰姆

1.8gTH嘉泰姆

28gTH嘉泰姆

0.75gTH嘉泰姆

5gTH嘉泰姆

400gTH嘉泰姆

CXSD62110gTH嘉泰姆

QFN3x3-20gTH嘉泰姆

TQFN3x3-16gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

20gTH嘉泰姆

3gTH嘉泰姆

28gTH嘉泰姆

1.8|1.5|0.5gTH嘉泰姆

5gTH嘉泰姆

740gTH嘉泰姆

CXSD62111gTH嘉泰姆

TQFN4x4-24gTH嘉泰姆

|QFN3x3-20gTH嘉泰姆

CMgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

15gTH嘉泰姆

5gTH嘉泰姆

28gTH嘉泰姆

0.5gTH嘉泰姆

NgTH嘉泰姆

3000gTH嘉泰姆

CXSD62112gTH嘉泰姆

TDFN3x3-10gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

20gTH嘉泰姆

1.8gTH嘉泰姆

28gTH嘉泰姆

0.5gTH嘉泰姆

5gTH嘉泰姆

250gTH嘉泰姆

CXSD62113|CgTH嘉泰姆

TQFN3x3-20gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

15gTH嘉泰姆

6gTH嘉泰姆

25gTH嘉泰姆

2gTH嘉泰姆

NgTH嘉泰姆

550gTH嘉泰姆

CXSD62113EgTH嘉泰姆

TQFN 3x3 20gTH嘉泰姆

COTgTH嘉泰姆

2gTH嘉泰姆

2gTH嘉泰姆

11gTH嘉泰姆

6gTH嘉泰姆

25gTH嘉泰姆

2gTH嘉泰姆

NgTH嘉泰姆

550gTH嘉泰姆

CXSD62114gTH嘉泰姆

TQFN3x3-20gTH嘉泰姆

COTgTH嘉泰姆

2gTH嘉泰姆

2gTH嘉泰姆

11gTH嘉泰姆

5.5gTH嘉泰姆

25gTH嘉泰姆

2gTH嘉泰姆

NgTH嘉泰姆

280gTH嘉泰姆

CXSD62115gTH嘉泰姆

QFN4x4-24gTH嘉泰姆

VMgTH嘉泰姆

2gTH嘉泰姆

1gTH嘉泰姆

60gTH嘉泰姆

3.1gTH嘉泰姆

13.2gTH嘉泰姆

0.85gTH嘉泰姆

12gTH嘉泰姆

5000gTH嘉泰姆

CXSD62116A|B|CgTH嘉泰姆

SOP-8PgTH嘉泰姆

VMgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

20gTH嘉泰姆

2.9gTH嘉泰姆

13.2gTH嘉泰姆

0.8gTH嘉泰姆

12gTH嘉泰姆

16000gTH嘉泰姆

CXSD62117gTH嘉泰姆

SOP-20gTH嘉泰姆

VMgTH嘉泰姆

2gTH嘉泰姆

2gTH嘉泰姆

30gTH嘉泰姆

10gTH嘉泰姆

13.2gTH嘉泰姆

1gTH嘉泰姆

12gTH嘉泰姆

5000gTH嘉泰姆

CXSD62118gTH嘉泰姆

TDFN3x3-10gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

1gTH嘉泰姆

25gTH嘉泰姆

1.8gTH嘉泰姆

28gTH嘉泰姆

0.7gTH嘉泰姆

5gTH嘉泰姆

250gTH嘉泰姆

CXSD62119gTH嘉泰姆

TQFN3x3-20gTH嘉泰姆

COTgTH嘉泰姆

2gTH嘉泰姆

1gTH嘉泰姆

40gTH嘉泰姆

1.8gTH嘉泰姆

25gTH嘉泰姆

REFIN SettinggTH嘉泰姆

5gTH嘉泰姆

700gTH嘉泰姆

CXSD62120gTH嘉泰姆

QFN 3x3 20gTH嘉泰姆

TQFN 3x3 16gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

20gTH嘉泰姆

3gTH嘉泰姆

28gTH嘉泰姆

1.8|1.5 1.35|1.2 0.5gTH嘉泰姆

5gTH嘉泰姆

800gTH嘉泰姆

CXSD62121AgTH嘉泰姆

TQFN3x3 20gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

15gTH嘉泰姆

3gTH嘉泰姆

28gTH嘉泰姆

0.75gTH嘉泰姆

5gTH嘉泰姆

220gTH嘉泰姆

CXSD62121BgTH嘉泰姆

TQFN3x3 20gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

15gTH嘉泰姆

3gTH嘉泰姆

28gTH嘉泰姆

0.75gTH嘉泰姆

5gTH嘉泰姆

220gTH嘉泰姆

CXSD62121gTH嘉泰姆

TQFN3x3-20gTH嘉泰姆

COTgTH嘉泰姆

1gTH嘉泰姆

2gTH嘉泰姆

20gTH嘉泰姆

3gTH嘉泰姆

28gTH嘉泰姆

0.75gTH嘉泰姆

5gTH嘉泰姆

180gTH嘉泰姆

 gTH嘉泰姆

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