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目录R9H嘉泰姆

1.产品概述                       2.产品特点R9H嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 R9H嘉泰姆
5.产品封装图                     6.电路原理图                   R9H嘉泰姆
7.功能概述                        8.相关产品R9H嘉泰姆

一,产品概述(General Description)  R9H嘉泰姆

    The CXSD62121A CXSD62121B CXSD62121 integrates a synchronous buck PWM con-troller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It offers the lowest total solution cost in system where space is at a premium.  The CXSD62121A CXSD62121B CXSD62121 provides excellent transient response and accurate DC voltage output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM), the CXSD62121A CXSD62121B CXSD62121 provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN-20 Package,the Forced PWM Mode works nearly at constant frequency for low-noise requirements.  The CXSD62121A CXSD62121B CXSD62121 is equipped with accurate current-limit,output under-voltage, and output over-voltage protections.A Power-On- Reset function monitors the voltage on VCC prevents wrong operation during power on. Droop func-tion is allowed to adjust output voltage during light load period.The LDO is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current up to 1.5A. It also incorporates current-limit and thermal shutdown protection.The output voltage of LDO tracks the voltage at VREF pin.An internal resistor divider is used to provide a half volt-age of VREF for VTTREF and VTT Voltage. The VTT output voltage is only requiring 20μF of ceramic output capaci tance for stability and fast transient response. The S3 and S5 pins provide the sleep state for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 and S3 are both pulled low the device provides the soft-off for VTT and VTTREF                                                         R9H嘉泰姆

产品特点(Features)R9H嘉泰姆

High Input Voltages Range from 3V to 28V Input PowerR9H嘉泰姆
Provide Adjustable Output Voltage from 0.75V toR9H嘉泰姆
5.5V +1% Accuracy over TemperatureR9H嘉泰姆
Integrated MOSFET Drivers and Bootstrap Forward P-CH MOSFETR9H嘉泰姆
Low Quiescent Current (200μA)R9H嘉泰姆
Excellent Line and Load Transient ResponsesR9H嘉泰姆
PFM Mode for Increased Light Load EfficiencyR9H嘉泰姆
Constant On-Time Controller SchemeR9H嘉泰姆
- Switching Frequency Compensation for PWM ModeR9H嘉泰姆
- Adjustable Switching Frequency from 100kHz toR9H嘉泰姆
550kHz in PWM Mode with DC Output CurrentR9H嘉泰姆
S3 and S5 Pins Control The Device in S0, S3 or S4/S5 StateR9H嘉泰姆
Power Good MonitoringR9H嘉泰姆
Extra Droop Voltage Control Function withR9H嘉泰姆
Adjustable Current SettingR9H嘉泰姆
70% Under-Voltage Protection (UVP)R9H嘉泰姆
125% Over-Voltage Protection (OVP)R9H嘉泰姆
Adjustable Current-Limit ProtectionR9H嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)R9H嘉泰姆
TQFN-20 3mmx3mm Thin packageR9H嘉泰姆
Lead Free Available (RoHS Compliant)R9H嘉泰姆
+1.5A LDO Section (VTT)R9H嘉泰姆
Sourcing or Sinking Current up to 1.5AR9H嘉泰姆
Fast Transient Response for Output VoltageR9H嘉泰姆
Output Ceramic Capacitors Support at least 10μF MLCCR9H嘉泰姆
VTT and VTTREF Track at Half the VDDQSNS by internal dividerR9H嘉泰姆
+20mV Accuracy for VTT and VTTREFR9H嘉泰姆
Independent Over-Current Limit (OCL)R9H嘉泰姆
Thermal Shutdown ProtectionR9H嘉泰姆
三,应用范围 (Applications)R9H嘉泰姆

DDR2, and DDR3 Memory Power SuppliesR9H嘉泰姆
SSTL-2 SSTL-18 and HSTL TerminationR9H嘉泰姆
四.下载产品资料PDF文档 R9H嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！R9H嘉泰姆

 R9H嘉泰姆

五,产品封装图 (Package)R9H嘉泰姆

R9H嘉泰姆
六.电路原理图R9H嘉泰姆

R9H嘉泰姆

七,功能概述R9H嘉泰姆

Soft- Start (cont.)R9H嘉泰姆

During soft-start stage before the PGOOD pin is ready,R9H嘉泰姆
the under voltage protection is prohibited. The over volt-R9H嘉泰姆
age and current limit protection functions are enabled. IfR9H嘉泰姆
the output capacitor has residue voltage before startup,R9H嘉泰姆
both low-side and high-side MOSFETs are in off-stateR9H嘉泰姆
until the internal digital soft start voltage equal the inter-R9H嘉泰姆
nal feedback voltage. This will ensure the output voltageR9H嘉泰姆
starts from its existing voltage level.R9H嘉泰姆
The VTT LDO part monitors the output current, both sourc-R9H嘉泰姆
ing and sinking current, and limits the maximum outputR9H嘉泰姆
current to prevent damages during current overload orR9H嘉泰姆
short circuit (shorted from VTT to GND or VLDOIN)R9H嘉泰姆
conditions.R9H嘉泰姆
The VTT LDO provides a soft-start function, using theR9H嘉泰姆
constant current to charge the output capacitor that givesR9H嘉泰姆
a rapid and linear output voltage rise. If the load current isR9H嘉泰姆
above the current limit start-up, the VTT cannot startR9H嘉泰姆
successfully.CXSD62121A CXSD62121B CXSD62121 has an independent counter for each output,R9H嘉泰姆
but the PGOOD signal indicates only the status of VDDQR9H嘉泰姆
and does not indicate VTT power good externally.R9H嘉泰姆
Power-Good Output (PGOOD)R9H嘉泰姆
PGOOD is an open-drain output and the PGOOD com-R9H嘉泰姆
parator continuously monitors the output voltage. PGOODR9H嘉泰姆
is actively held low in shutdown, and standby. When PWMR9H嘉泰姆
converter’s output voltage is greater than 95% of its tar-R9H嘉泰姆
get value, the internal open-drain device will be pulledR9H嘉泰姆
low. After 63μs debounce time, the PGOOD goes high.R9H嘉泰姆
The PGOOD goes low if VVDDQ output is 10% below orR9H嘉泰姆
above its nominal regulation point.R9H嘉泰姆
Under Voltage ProtectionR9H嘉泰姆
In the process of operation, if a short-circuit occurs, theR9H嘉泰姆
output voltage will drop quickly. When load current is big-R9H嘉泰姆
ger than current limit threshold value, the output voltageR9H嘉泰姆
will fall out of the required regulation range. The under-R9H嘉泰姆
voltage continually monitors the setting output voltageR9H嘉泰姆
after 2ms of PWM operations to ensure startup. If a loadR9H嘉泰姆
step is strong enough to pull the output voltage lowerR9H嘉泰姆
than the under voltage threshold (70% of normal outputR9H嘉泰姆
voltage), CXSD62121A CXSD62121B CXSD62121 shuts down the output gradually andR9H嘉泰姆
latches off both high and low side MOSFETs.R9H嘉泰姆
Over Voltage Protection (OVP)R9H嘉泰姆
The feedback voltage should increase over 125% of theR9H嘉泰姆
reference voltage due to the high-side MOSFET failure orR9H嘉泰姆
for other reasons, and the over voltage protection com-R9H嘉泰姆
parator designed with a 1.5μs noise filter will force theR9H嘉泰姆
low-side MOSFET gate driver to be high. This action ac-R9H嘉泰姆
tively pulls down the output voltage and eventually at-R9H嘉泰姆
tempts to blow the battery fuse.R9H嘉泰姆
When the OVP occurs, the PGOOD pin will pull down andR9H嘉泰姆
latch-off the converter. This OVP scheme only clamps theR9H嘉泰姆
voltage overshoot, and does not invert the output voltageR9H嘉泰姆
when otherwise activated with a continuously high outputR9H嘉泰姆
from low-side MOSFET driver. It’s a common problem forR9H嘉泰姆
OVP schemes with a latch. Once an over-voltage faultR9H嘉泰姆
condition is set, toggling VCC power-on-reset signal canR9H嘉泰姆
only reset it.R9H嘉泰姆
PWM Converter Current LimitR9H嘉泰姆
The current-limit circuit employs a unique “valley” currentR9H嘉泰姆
sensing algorithm (Figure 2). CS pin should be con-R9H嘉泰姆
nected to VCC through the trip voltage-setting resistor,R9H嘉泰姆
RCS. CS terminal sinks 5mA current, ICS, and the currentR9H嘉泰姆
limit threshold is set to the voltage across the RCS. TheR9H嘉泰姆
voltage between or CS_GND pin and PHASE pin moni-R9H嘉泰姆
tors the inductor current so that PHASE pin should beR9H嘉泰姆
connected to the drain terminal of the low side MOSFET.R9H嘉泰姆
PGND is used as the positive current sensing node soR9H嘉泰姆
that PGND should be connected to the proper currentR9H嘉泰姆
sensing device, i.e. the sense resistor or the source ter-R9H嘉泰姆
minal of the low side MOSFET.R9H嘉泰姆
If the magnitude of the current-sense signal is above theR9H嘉泰姆
current-limit threshold, the PWM is not allowed to initiateR9H嘉泰姆
a new cycle. The actual peak current is greater than theR9H嘉泰姆
current-limit threshold by an amount equal to the induc-R9H嘉泰姆
tor ripple current. Therefore, the exact current- limit char-R9H嘉泰姆
acteristic and maximum load capability are a function ofR9H嘉泰姆
the sense resistance, inductor value, and input voltage.R9H嘉泰姆
八,相关产品               更多同类产品...... R9H嘉泰姆

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