The CXPP5449CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications

The CXPP5449CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications

产品型号:CXPP5449CS
产品类型:MOSFET
产品系列: N沟道P沟道双极MOSFETs
产品状态:量产
浏览次数:43 次
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产品简介

The CXPP5449CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
 N-Channel
VDS =30V, ID =3.5A
RDS(ON) < 58mΩ @ VGS=10V
RDS(ON) < 95mΩ @ VGS=4.5V
 P-Channel
VDS =-30V, ID = -2.7A
RDS(ON) < 100mΩ @ VGS=-10V
RDS(ON) < 150mΩ @ VGS=-4.5V
 High power and current handing capability

技术参数

输入电压范围 (VIN) V ~ VDS(Max):-30V
输出电压 (VOUT)VGS(th)(V):-1.6V
封装类型SOT23-6L
Channel type N沟道P沟道双极MOSFETs
Rated voltageVDS (V)):30
Rated currentVGS(th)(V):1.5
On resistance69mΩ

产品详细介绍

目录

   产品概述 返回TOP


The CXPP5449CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications

   产品特点 返回TOP


 N-Channel 

VDS =30V, ID =3.5A 

RDS(ON) < 58mΩ @ VGS=10V 

RDS(ON) < 95mΩ @ VGS=4.5V 

 P-Channel 

VDS =-30V, ID = -2.7A 

 RDS(ON) < 100mΩ @ VGS=-10V 

 RDS(ON) < 150mΩ @ VGS=-4.5V 

 High power and current handing capability

   应用范围 返回TOP


 H-bridge 

 Inverters

   技术规格书(产品PDF) 返回TOP 


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MOSFET
Part N-Channel P-Channel Operating Package
number VDS   (V) RDS(ON) (mΩ) VGS=10V VGS(th)(V) VDS (V) RDS(ON) (mΩ) VGS=-10V VGS(th)(V) Temperature(℃)
CXPP5449CS 30 36 1.5 -30 69 -1.6 -145 SOT23-6L
CXPP5450CS 30 20 1.6 -30 28 -1.9 -145 SOP-8
CXPP5451CS 40 15.4 1.7 -40 26 -1.5 -145 SOP-8
CXPP5452CS 60 37 2 -60 64 -26 -145 SOP-8

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