CXMS5107是N和P通道增强MOS场效应晶体管作为DC-DC转换器或电平移位应用的单个封装采用先进的沟道技术和设计以提供低栅极电荷的优秀RDS（ON）

CXMS5107是N和P通道增强MOS场效应晶体管作为DC-DC转换器或电平移位应用的单个封装采用先进的沟道技术和设计以提供低栅极电荷的优秀RDS（ON）
 Trench Technology
 Supper high density cell design for extremely low Rds(on)
 Exceptional ON resistance and maximum DC current capability

目录

• 1.产品概述       2.产品特点     

• 3.应用范围       4.技术规格书下载（PDF文档）

• 5.产品封装       6.电路原理图  

• 7.相关产品

   产品概述 返回TOP

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The CXMS5107 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product CXMS5107 is Pb-free

   产品特点 返回TOP

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 Trench Technology 

 Supper high density cell design for extremely low Rds(on) 

 Exceptional ON resistance and maximum DC current capability 

 Small package design with SOT-563

   应用范围 返回TOP

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 Driver: Relays, Solenoids, Lamps, Hammers 

 Power supply converters circuit 

 Load/Power Switching for potable device

   技术规格书（产品PDF) 返回TOP 

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产品封装图 返回TOP

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电路原理图 返回TOP

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场效应晶体管
Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		(L×W)
			(V)	(V)	(V)	(Ω)	(A)		(mm)
CXMS5105	N + P	2	20/-20	±6/±8	0.85/-1.0	0.18/0.085	0.65/-3.1	DFN2020-6L	2.0 x 2.0
CXMS5106	N + P	2	20/-20	±6	0.9/-0.9	0.23/0.52	0.8/-0.59	SOT-363	2.1 x 2.3
CXMS5107	N + P	2	20/-20	±6	0.9/-0.9	0.18/0.45	0.79/-0.5	SOT-563	1.6 x 1.6
CXMS5108	N + P	2	20/-20	±8	1/-1	0.033/0.085	4.4/-2.8	SOT-23-6L	2.9 x 2.8
CXMS5109	N + P	2	12/-12	±8	1.2/-1.2	0.028/-0.057	5.1/-4.0	DFN2020-6L	2.0 x 2.0