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CXSD62121B功率因数调制(PFM)或脉冲宽度调制(PWM)模式下提供出色的瞬态响应和准确的直流电压输出
发表时间:2020-04-24浏览次数:137
CXSD62121B功率因数调制(PFM)或脉冲宽度调制(PWM)模式下提供出色的瞬态响应和准确的直流电压输出
 

目录FLh嘉泰姆

1.产品概述                       2.产品特点FLh嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 FLh嘉泰姆
5.产品封装图                     6.电路原理图                   FLh嘉泰姆
7.功能概述                        8.相关产品FLh嘉泰姆

一,产品概述(General Description)  FLh嘉泰姆

    The CXSD62121A CXSD62121B CXSD62121 integrates a synchronous buck PWM con-troller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It offers the lowest total solution cost in system where space is at a premium.  The CXSD62121A CXSD62121B CXSD62121 provides excellent transient response and accurate DC voltage output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM), the CXSD62121A CXSD62121B CXSD62121 provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN-20 Package,the Forced PWM Mode works nearly at constant frequency for low-noise requirements.  The CXSD62121A CXSD62121B CXSD62121 is equipped with accurate current-limit,output under-voltage, and output over-voltage protections.A Power-On- Reset function monitors the voltage on VCC prevents wrong operation during power on. Droop func-tion is allowed to adjust output voltage during light load period.The LDO is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current up to 1.5A. It also incorporates current-limit and thermal shutdown protection.The output voltage of LDO tracks the voltage at VREF pin.An internal resistor divider is used to provide a half volt-age of VREF for VTTREF and VTT Voltage. The VTT output voltage is only requiring 20μF of ceramic output capaci tance for stability and fast transient response. The S3 and S5 pins provide the sleep state for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 and S3 are both pulled low the device provides the soft-off for VTT and VTTREF                                                         FLh嘉泰姆

产品特点(Features)FLh嘉泰姆

High Input Voltages Range from 3V to 28V Input PowerFLh嘉泰姆
Provide Adjustable Output Voltage from 0.75V toFLh嘉泰姆
5.5V +1% Accuracy over TemperatureFLh嘉泰姆
Integrated MOSFET Drivers and Bootstrap Forward P-CH MOSFETFLh嘉泰姆
Low Quiescent Current (200μA)FLh嘉泰姆
Excellent Line and Load Transient ResponsesFLh嘉泰姆
PFM Mode for Increased Light Load EfficiencyFLh嘉泰姆
Constant On-Time Controller SchemeFLh嘉泰姆
- Switching Frequency Compensation for PWM ModeFLh嘉泰姆
- Adjustable Switching Frequency from 100kHz toFLh嘉泰姆
550kHz in PWM Mode with DC Output CurrentFLh嘉泰姆
S3 and S5 Pins Control The Device in S0, S3 or S4/S5 StateFLh嘉泰姆
Power Good MonitoringFLh嘉泰姆
Extra Droop Voltage Control Function withFLh嘉泰姆
Adjustable Current SettingFLh嘉泰姆
70% Under-Voltage Protection (UVP)FLh嘉泰姆
125% Over-Voltage Protection (OVP)FLh嘉泰姆
Adjustable Current-Limit ProtectionFLh嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)FLh嘉泰姆
TQFN-20 3mmx3mm Thin packageFLh嘉泰姆
Lead Free Available (RoHS Compliant)FLh嘉泰姆
+1.5A LDO Section (VTT)FLh嘉泰姆
Sourcing or Sinking Current up to 1.5AFLh嘉泰姆
Fast Transient Response for Output VoltageFLh嘉泰姆
Output Ceramic Capacitors Support at least 10μMLCCFLh嘉泰姆
VTT and VTTREF Track at Half the VDDQSNS by internal dividerFLh嘉泰姆
+20mV Accuracy for VTT and VTTREFFLh嘉泰姆
Independent Over-Current Limit (OCL)FLh嘉泰姆
Thermal Shutdown ProtectionFLh嘉泰姆
三,应用范围 (Applications)FLh嘉泰姆


DDR2, and DDR3 Memory Power SuppliesFLh嘉泰姆
SSTL-2 SSTL-18 and HSTL TerminationFLh嘉泰姆
四.下载产品资料PDF文档 FLh嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持FLh嘉泰姆

 QQ截图20160419174301.jpgFLh嘉泰姆

五,产品封装图 (Package)FLh嘉泰姆


blob.pngFLh嘉泰姆
六.电路原理图FLh嘉泰姆


blob.pngFLh嘉泰姆

七,功能概述FLh嘉泰姆


Soft- Start (cont.)FLh嘉泰姆

During soft-start stage before the PGOOD pin is ready,FLh嘉泰姆
the under voltage protection is prohibited. The over volt-FLh嘉泰姆
age and current limit protection functions are enabled. IfFLh嘉泰姆
the output capacitor has residue voltage before startup,FLh嘉泰姆
both low-side and high-side MOSFETs are in off-stateFLh嘉泰姆
until the internal digital soft start voltage equal the inter-FLh嘉泰姆
nal feedback voltage. This will ensure the output voltageFLh嘉泰姆
starts from its existing voltage level.FLh嘉泰姆
The VTT LDO part monitors the output current, both sourc-FLh嘉泰姆
ing and sinking current, and limits the maximum outputFLh嘉泰姆
current to prevent damages during current overload orFLh嘉泰姆
short circuit (shorted from VTT to GND or VLDOIN)FLh嘉泰姆
conditions.FLh嘉泰姆
The VTT LDO provides a soft-start function, using theFLh嘉泰姆
constant current to charge the output capacitor that givesFLh嘉泰姆
a rapid and linear output voltage rise. If the load current isFLh嘉泰姆
above the current limit start-up, the VTT cannot startFLh嘉泰姆
successfully.CXSD62121A CXSD62121B CXSD62121 has an independent counter for each output,FLh嘉泰姆
but the PGOOD signal indicates only the status of VDDQFLh嘉泰姆
and does not indicate VTT power good externally.FLh嘉泰姆
Power-Good Output (PGOOD)FLh嘉泰姆
PGOOD is an open-drain output and the PGOOD com-FLh嘉泰姆
parator continuously monitors the output voltage. PGOODFLh嘉泰姆
is actively held low in shutdown, and standby. When PWMFLh嘉泰姆
converter’s output voltage is greater than 95% of its tar-FLh嘉泰姆
get value, the internal open-drain device will be pulledFLh嘉泰姆
low. After 63μs debounce time, the PGOOD goes high.FLh嘉泰姆
The PGOOD goes low if VVDDQ output is 10% below orFLh嘉泰姆
above its nominal regulation point.FLh嘉泰姆
Under Voltage ProtectionFLh嘉泰姆
In the process of operation, if a short-circuit occurs, theFLh嘉泰姆
output voltage will drop quickly. When load current is big-FLh嘉泰姆
ger than current limit threshold value, the output voltageFLh嘉泰姆
will fall out of the required regulation range. The under-FLh嘉泰姆
voltage continually monitors the setting output voltageFLh嘉泰姆
after 2ms of PWM operations to ensure startup. If a loadFLh嘉泰姆
step is strong enough to pull the output voltage lowerFLh嘉泰姆
than the under voltage threshold (70% of normal outputFLh嘉泰姆
voltage), CXSD62121A CXSD62121B CXSD62121 shuts down the output gradually andFLh嘉泰姆
latches off both high and low side MOSFETs.FLh嘉泰姆
Over Voltage Protection (OVP)FLh嘉泰姆
The feedback voltage should increase over 125% of theFLh嘉泰姆
reference voltage due to the high-side MOSFET failure orFLh嘉泰姆
for other reasons, and the over voltage protection com-FLh嘉泰姆
parator designed with a 1.5μs noise filter will force theFLh嘉泰姆
low-side MOSFET gate driver to be high. This action ac-FLh嘉泰姆
tively pulls down the output voltage and eventually at-FLh嘉泰姆
tempts to blow the battery fuse.FLh嘉泰姆
When the OVP occurs, the PGOOD pin will pull down andFLh嘉泰姆
latch-off the converter. This OVP scheme only clamps theFLh嘉泰姆
voltage overshoot, and does not invert the output voltageFLh嘉泰姆
when otherwise activated with a continuously high outputFLh嘉泰姆
from low-side MOSFET driver. It’s a common problem forFLh嘉泰姆
OVP schemes with a latch. Once an over-voltage faultFLh嘉泰姆
condition is set, toggling VCC power-on-reset signal canFLh嘉泰姆
only reset it.FLh嘉泰姆
PWM Converter Current LimitFLh嘉泰姆
The current-limit circuit employs a unique “valley” currentFLh嘉泰姆
sensing algorithm (Figure 2). CS pin should be con-FLh嘉泰姆
nected to VCC through the trip voltage-setting resistor,FLh嘉泰姆
RCS. CS terminal sinks 5mA current, ICS, and the currentFLh嘉泰姆
limit threshold is set to the voltage across the RCS. TheFLh嘉泰姆
voltage between or CS_GND pin and PHASE pin moni-FLh嘉泰姆
tors the inductor current so that PHASE pin should beFLh嘉泰姆
connected to the drain terminal of the low side MOSFET.FLh嘉泰姆
PGND is used as the positive current sensing node soFLh嘉泰姆
that PGND should be connected to the proper currentFLh嘉泰姆
sensing device, i.e. the sense resistor or the source ter-FLh嘉泰姆
minal of the low side MOSFET.FLh嘉泰姆
If the magnitude of the current-sense signal is above theFLh嘉泰姆
current-limit threshold, the PWM is not allowed to initiateFLh嘉泰姆
a new cycle. The actual peak current is greater than theFLh嘉泰姆
current-limit threshold by an amount equal to the induc-FLh嘉泰姆
tor ripple current. Therefore, the exact current- limit char-FLh嘉泰姆
acteristic and maximum load capability are a function ofFLh嘉泰姆
the sense resistance, inductor value, and input voltage.FLh嘉泰姆
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