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首页 > 产品中心 > 电源管理 > 限流负载开关 > 模拟负载开关 >CXDS4227Q高性能双极双掷DPDT CMOS模拟开关在单电源+2.5V到+4.5V之间工作有低位对位偏差和高通道对通道噪声隔离每个开关都是双向的在输出端几乎不衰减高速信号
CXDS4227Q高性能双极双掷DPDT CMOS模拟开关在单电源+2.5V到+4.5V之间工作有低位对位偏差和高通道对通道噪声隔离每个开关都是双向的在输出端几乎不衰减高速信号
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CXDS4227Q是一款高性能、双极双掷(DPDT)CMOS模拟开关,可在单电源+2.5V到+4.5V之间工作。CXDS4227Q专为手机和消费类应用(如手机、数码相机和带有集线器或控制器的笔记本电脑,USB I/O有限)中高速USB2.0信号的交换而设计。CXDS4227Q具有低位对位偏差和高通道对通道噪声隔离,并且兼容各种标准,例如高速USB 2.0(480Mbps)。每个开关都是双向的,在输出端几乎不衰减高速信号。它的带宽对于通过高速USB 2.0差分信号(480Mbps)和良好的信号完整性来说是非常有限的。
CXDS4227Q具有D+/D-上的特殊电路,当USB设备断电或打开时,该电路允许设备承受对D+或D+短路的VBU。SEL/OE引脚具有过电压保护,允许电压高于VCC,引脚上出现高达7.0V的电压,而不会损坏或中断部件的运行,无论工作电压如何。CXDS4227Q还具有智能电路,即使当SEL/OE控制电压低于VCC电源电压时,也能将VCC泄漏电流降至最低。换言之,在实际应用中,不需要额外的设备来改变SEL/OE电平,使之与VCC的相同。
CXDS4227Q有QFN1418-10L包装。标准产品无铅无卤。
电源电压:2.5~4.5V
•3dB带宽:550MHz@CL=5pF
关闭隔离:-38dB@250MHz
•串扰:-47dB@250MHz
低静态电流:<1uA

CXDS4227Q高性能双极双掷DPDT CMOS模拟开关在单电源+2.5V到+4.5V之间工作有低位对位偏差和高通道对通道噪声隔离每个开关都是双向的在输出端几乎不衰减高速信号
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                          目录JgG嘉泰姆

   1.产品概述      2.产品特点      3.应用范围     4.技术规格书下载(PDF文档)JgG嘉泰姆

   5.产品封装      6.电路原理图     7.相关产品JgG嘉泰姆

一.产品概述JgG嘉泰姆


    The CXDS4227Q is a high performance, double pole double throw (DPDT) CMOS analog switch that operates from a single +2.5V to +4.5V power supply. The CXDS4227Q is designed for switching of high-speed USB2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The CXDS4227Q has low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480Mbps). Each switch is bi-directional and offers little attenuation of the high-speed signals at the outputs. Its bandwidth is quite marginal to pass high-speed USB 2.0 differential signals (480Mbps) with good signal integrity. JgG嘉泰姆

   The CXDS4227Q is featured with special circuitry on the D+/D-, which allows the device to withstand a VBUS short to D+ or D- when the USB devices are either powered off or on. The SEL/OE pin has overvoltage protection that allows voltages above VCC, up to 7.0V to be present on the pin without damage or disruption of operation of the part, regardless of the operating voltage. The CXDS4227Q is also featured with smart circuitry to minimize VCC leakage current even when SEL/OE control voltage is lower than VCC supply voltage. In other word, there is no need of additional device to shift SEL/OE level to be the same as that of VCC in real application. JgG嘉泰姆

   The CXDS4227Q is available in QFN1418-10L package. Standard products are Pb-Free and halogen-Free.  JgG嘉泰姆

二.产品特点JgG嘉泰姆


 Supply voltage : 2.5~ 4.5VJgG嘉泰姆

  -3dB Bandwidth : 550MHz @ CL=5pFJgG嘉泰姆

  Off isolation : -38dB @ 250MHzJgG嘉泰姆

  Crosstalk : -47dB @ 250MHzJgG嘉泰姆

  Low quiescent current :<1uAJgG嘉泰姆

三.应用范围JgG嘉泰姆


 Cell phonesJgG嘉泰姆

  MIDJgG嘉泰姆

  RouterJgG嘉泰姆

  Other electronics equipments    JgG嘉泰姆

四.技术规格书(产品PDF)JgG嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!JgG嘉泰姆

 QQ截图20160419174301.jpgJgG嘉泰姆

五.产品封装图JgG嘉泰姆


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六.电路原理图JgG嘉泰姆


blob.png   JgG嘉泰姆

七.相关芯片选择指南     更多同类产品......JgG嘉泰姆


模拟开关 > 数据开关
Product Configuration VIN IQ BW@-3dB THD+N Crosstalk OFF  Size Package
(Min.) (Max.) (Max.) (Typ.) (Typ.) (Typ.) (Typ.) (L×W)
(V) (uA) (Ω) (dB) (dB) (dB) (mm)
CXDS4219B SPDT 2.3 5.5 1 400 -70 -68 -69 2.1 x 2.3 SOT-363
CXDS4220C 4-Lane MIPI 2.7 4.5 120 1500   -43 -39 2.4 x 2.4 WLCSP-36B
CXDS4221Q Dual SPDT 2.3 5.5 1 660 -70 -60 -45 1.4 x 1.8 QFN1418-10L
CXDS4222Q 3:1 DPDT 2.3 5.5 75 1200 - -57 -57 1.8 x 1.8 QFN1818-12L
CXDS4223Q 4:1 DPDT 2.3 5.5 80 1200 - -30 -50 1.8 x 2.6 QFN1826-16L
CXDS4224QA 2:1 DPDT 2.3 5.5 55 200 - -70 -70 1.4 x 1.8 QFN1418-10L
CXDS4224QB 2:1 DPDT 2.3 5.5 55 200 - -70 -70 2.1 x 1.6 QFN2116-10L
CXDS4225Q 2:1 DPDT 2.3 5.5 1 800 - -47 -36 1.4 x 1.8 QFN1418-10L
CXDS4226Q 2:1 DPDT 2.3 4.5 1 800 - -47 -36 2.1 x 1.6 QFN2116-10L
CXDS4227Q 2:1 DPDT 2.5 4.5 1 800 - -47 -38 1.4 x 1.8 QFN1418-10L