CXES4276 CXES4276A CXES4276B集成了高边N沟道MOSFET和低边N沟道MOSFET以及自适应死区控制。CXES4276A CXES4276B具有内置的三态脉冲宽度调制输入功能，可支持多个脉冲宽度调制控制器。当PWM输入信号保持三态时，三态函数在不考虑ZC函数的情况下关闭高侧MOSFET，打开低侧MOSFET。该装置还配备了上电复位（POR）和使控制功能成为一个单一的包和准确的电流限制。该器件的过流保护通过使用低边MOSFET的RDS（ON）上的电压降来监测输出电流，从而消除了对高效率和低成本的电流传感电阻的需求。带滞后的POR电路监测VCC电源电压，以便在通电/断电时启动/关闭IC。CXES4276A CXES4276B也可以由其他电源系统启用或禁用。将EN引脚拉高或拉低将打开或关闭设备。
·VCC的4.5V~5.5V输入范围
·车辆识别号的4.5V~25V输入范围
·VCC引脚上电复位监控
·高达25A（峰值），13A（连续）输出电流刻度
·可调过流保护阈值
·高达1.5MHz的脉宽调制操作
·内置三态PWM输入功能
·内置定时控制功能
·内置N-CH MOSFETforhighside，N-CH MOSFET for low side
·跳过模式操作
·过温保护
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[ CXES4276 ]
目录
7.相关产品
产品概述 返回TOP
The CXES4276A CXES4276B integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The CXES4276A CXES4276B have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset(POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The CXES4276A CXES4276B also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
产品特点 返回TOP
· 4.5V ~ 5.5V Input Range for VCC
· 4.5V ~ 25V Input Range for VIN
· Power-On-Reset Monitoring on VCC Pin
· Up to 25A (peak), 13A (continuous) output current scale
· Adjustable Over-Current Protection Threshold
· Up to 1.5MHz PWM operation
· Built-in Tri-State PWM input Function
· Built in EN Timing Control function
· Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
· Skip Mode Operation
· Over-Temperature Protection
· TQFN 5x5-30 package
· Lead Free and Green Devices Available (RoHS Compliant)
应用范围 返回TOP
· Desktops
· Graphics Cards
· Severs
· Portable/Notebook Regulators
技术规格书（产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP 更多同类产品......
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Products > Switch > Power Distribution Controller |
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Part_No |
Package |
No.of Channel |
External Power Switch Type |
Input Voltage (V) |
Quescint Current (uA) |
Wrong Input Voltage Protection |
Inpute Voltage UVLO |
SCP |
OCP (A) |
OVP |
UVP |
EN |
High/ Low EN |
POK |
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|
min |
max |
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SOP8 TDFN2x2-8 |
1 |
N-Channel MOSFET |
10 |
26 |
750 |
Y |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
|
|
TDFN3x3-10 |
1 |
N-Channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
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|
TDFN3x3-10 |
1 |
N-channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
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Switch> Analog Switch |
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Part_No |
Package & Pins |
VDD Voltage (V) |
IDD, Supply Current (mA) |
Input Voltage (max)(V) |
Power Switch On Resistance(milohm) |
Turn-On Time(ms) |
Turn-Off Time(ms) |
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|
min |
max |
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WLCSP1.2x1.2-9 |
2.9 |
5.5 |
35 |
0~5.5 |
0.2 |
5 |
1 |
|
|
WLCSP1.2x0.8-6 |
1.5 |
5.5 |
20 |
1.5-5.5 |
22 |
4.4 |
36.5 |
|
|
WLCSP 1.42x0.92-6 |
1.7 |
3.6 |
0.5 |
VDD-5.5~VDD |
0.2 |
0.1 |
1 |
|
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Switch> DrMOS |
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Part_No |
Package |
Description |
Topology |
# of PWM Outputs |
Drive Lout (A) |
Vin (V) |
Fmax (Khz) |
R-Top (milohm) |
R-Sync (milohm) |
Iq (No load) (uA) |
En pin |
Sync Pin |
PSM/ CCM pin |
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|
min |
max |
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TQFN4 x4-23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
8 |
4.5 |
25 |
1500 |
25 |
7 |
90 |
Y |
N |
Y |
|
|
TQFN4x4 -23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
6 |
4.5 |
25 |
1500 |
30 |
12 |
90 |
Y |
N |
Y |
|
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel |
MOSFET1 |
13 |
4.5 |
25 |
1500 |
9.7 |
5.2 |
90 |
Y |
N |
Y |
|
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
|
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
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