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首页 > 产品中心 > 电源管理 > DC降压型芯片 > Buck降压型芯片 >CXSD62113E双降压恒定开启时间同步的PWM控制器线性调节器提供高达100毫安的输出电流
CXSD62113E双降压恒定开启时间同步的PWM控制器线性调节器提供高达100毫安的输出电流
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CXSD62113E线性稳压器为备用电源提供5V和3.3V输出。线性调节器提供高达100毫安的输出电流。当PWMx输出电压高于LDOx旁路阈值时,相关LDOx稳压器关闭,其输出通过内部切换MOSFET连接到VOUTx。它可以节省功耗。电荷泵电路采用70kHz时钟驱动器,使用VUT1作为其电源,以产生接近15V直流电压的AP。

CXSD62113E双降压恒定开启时间同步的PWM控制器线性调节器提供高达100毫安的输出电流
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产品简介

目录Dge嘉泰姆

1.产品概述                       2.产品特点Dge嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 Dge嘉泰姆
5.产品封装图                     6.电路原理图                   Dge嘉泰姆
7.功能概述                        8.相关产品Dge嘉泰姆

一,产品概述(General Description)         Dge嘉泰姆


  The CXSD6211CXSD62113A CXSD62113B CXSD62113C CXSD62113E integrates dual step-down, constant-on-time,synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel) and two low drop-out regulators as well as various protections into a chip.The PWM controllers step down high voltage of a battery to generate low-voltage for NB applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5V by setting a resistive voltage-divider from VOUTx to GND.Dge嘉泰姆

The linear regulators provide 5V and 3.3V output for standby power supply. The linear regulators provide up to 100mA output current. When the PWMx output voltage is higher than LDOx bypass threshold, the related LDOx regulator is shut off and its output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation. The charge pump circuit with 270kHz clock driver uses VOUT1 as its power supply to generate ap-proximately 15V DC voltage.Dge嘉泰姆
  The CXSD62113/A/B/C provides excellent transient response and accurate DC output voltage in either PFM or PWM Mode. In Pulse-Frequency Mode (PFM), theDge嘉泰姆
CXSD62113/A/B/C provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. The Forced-PWM Mode works nearly atDge嘉泰姆

constant frequency for low-noise requirements. The unique ultrasonic mode  maintains the switching frequency above 25kHz, which eliminates noise inDge嘉泰姆
audio application.Dge嘉泰姆
  The CXSD62113/A/B/C is equipped with accurate sourc-ing and current-limit, output under-voltage output over-voltage protections, being perfect for NB applications. A 1.4ms (typ.) digital soft-start can reduce the start-up current. A soft-stop function actively discharges the output capacitors by the discharge device. The CXSD62113/A/B has individual enable controls for each PWM channels. Pulling both EN1/2 pin low shuts down the all of outputs unless LDO3 output. The LDO3 and LDO5 of CXSD62113A/C are always on standby power.Dge嘉泰姆
The CXSD62113/A/B/C is available in a TQFN3x3-20 package.Dge嘉泰姆
二.产品特点(Features)Dge嘉泰姆


Wide Input voltage Range from 6V to 25VDge嘉泰姆
Provide 5 Independent Outputs with ±1.0% Accuracy Over-TemperatureDge嘉泰姆
- PWM1 Controller with Adjustable (2V to 5.5V) Out-putDge嘉泰姆
PWM2 Controller with Adjustable (2V to 5.5V) Out-putDge嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V OutputDge嘉泰姆
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V OutputDge嘉泰姆
270kHz Clock Signal for 15V Charge Pump (Used VOUT1 as Its Power Supply)Dge嘉泰姆
Excellent Line/Load Regulations about ±1.5% Over-Temperature RangeDge嘉泰姆
Built in POR Control Scheme ImplementedDge嘉泰姆
Constant On-Time Control Scheme with FrequencyDge嘉泰姆
Compensation for PWM ModeDge嘉泰姆
Selectable Switching Frequency in PWM ModeDge嘉泰姆
Built-in Digital Soft-Start for PWM Outputs and Soft-Dge嘉泰姆
Stop for PWM Outputs and LDO OutputsDge嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETDge嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)Dge嘉泰姆
Built-in Power Good Indicators (PWMs)Dge嘉泰姆
Independent Enable Inputs (PWMs, LDO)Dge嘉泰姆
70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)Dge嘉泰姆
Adjustable Current-Limit Protection (PWMs)Dge嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)Dge嘉泰姆
Over-Temperature ProtectionDge嘉泰姆
3mmx3mm Thin QFN-20 (TQFN3x3-20) packageDge嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)Dge嘉泰姆
三,应用范围 (Applications)Dge嘉泰姆


Notebook and Sub-Notebook ComputersDge嘉泰姆
Portable DevicesDge嘉泰姆
DDR1, DDR2, and DDR3 Power SuppliesDge嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered DevicesDge嘉泰姆
Graphic CardsDge嘉泰姆
Game ConsolesDge嘉泰姆
TelecommunicationsDge嘉泰姆
四.下载产品资料PDF文档 Dge嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持Dge嘉泰姆

 QQ截图20160419174301.jpgDge嘉泰姆

五,产品封装图 (Package)Dge嘉泰姆


blob.pngDge嘉泰姆
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六.电路原理图Dge嘉泰姆


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七,功能概述Dge嘉泰姆


Input Capacitor SelectionDge嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, select the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMS current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors are remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-side MOSFET with very low-impeadance PCB layout.Dge嘉泰姆
 MOSFET SelectionDge嘉泰姆
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs should be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:Dge嘉泰姆
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFETDge嘉泰姆
driver will not charge the miller capacitor of this MOSFET.Dge嘉泰姆
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. TheDge嘉泰姆
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driverDge嘉泰姆
sinking current path. This results in much less switching loss of the low-side MOSFETs. The dutyDge嘉泰姆
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-Dge嘉泰姆
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the powerDge嘉泰姆
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFETDge嘉泰姆
does not have this zero voltage switching condition, and because it conducts for less timeDge嘉泰姆
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be givenDge嘉泰姆
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.Dge嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitanceDge嘉泰姆
Layout ConsiderationDge嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.Dge嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike across the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transition of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of the circuit generates a large voltage spike during the switching interval. In general, using short and wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. And signal and power grounds are to be kept separating and finally combined to use the ground plane construction or single point grounding. The best tie-point between the signal ground and the power ground is at the negative side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are not recommended. Below is a checklist for your layout:Dge嘉泰姆
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0.8Dge嘉泰姆

5~12Dge嘉泰姆

16000Dge嘉泰姆

CXSD62100Dge嘉泰姆

TQFN3x3-10Dge嘉泰姆

VMDge嘉泰姆

1Dge嘉泰姆

1Dge嘉泰姆

25Dge嘉泰姆

4.5Dge嘉泰姆

13.2Dge嘉泰姆

0.6Dge嘉泰姆

5~12Dge嘉泰姆

2500Dge嘉泰姆

CXSD62101|LDge嘉泰姆

TDFN3x3-10Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

1Dge嘉泰姆

30Dge嘉泰姆

3Dge嘉泰姆

25Dge嘉泰姆

0.8Dge嘉泰姆

5~12Dge嘉泰姆

2000Dge嘉泰姆

CXSD62102Dge嘉泰姆

TQFN3x3-16Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

1Dge嘉泰姆

30Dge嘉泰姆

1.8Dge嘉泰姆

28Dge嘉泰姆

0.6Dge嘉泰姆

5Dge嘉泰姆

600Dge嘉泰姆

CXSD62102ADge嘉泰姆

TQFN 3x3 16Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

1Dge嘉泰姆

30Dge嘉泰姆

1.8Dge嘉泰姆

28Dge嘉泰姆

0.6Dge嘉泰姆

5Dge嘉泰姆

600Dge嘉泰姆

CXSD62103Dge嘉泰姆

QFN4x4-24Dge嘉泰姆

VMDge嘉泰姆

2Dge嘉泰姆

1Dge嘉泰姆

50Dge嘉泰姆

4.5Dge嘉泰姆

13.2Dge嘉泰姆

0.6Dge嘉泰姆

5~12Dge嘉泰姆

5000Dge嘉泰姆

CXSD62104Dge嘉泰姆

TQFN4x4-24Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

15Dge嘉泰姆

6Dge嘉泰姆

25Dge嘉泰姆

2Dge嘉泰姆

NDge嘉泰姆

550Dge嘉泰姆

CXSD62105Dge嘉泰姆

TQFN4x4-24Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

15Dge嘉泰姆

6Dge嘉泰姆

25Dge嘉泰姆

2Dge嘉泰姆

NDge嘉泰姆

550Dge嘉泰姆

CXSD62106|ADge嘉泰姆

TQFN4x4-4Dge嘉泰姆

TQFN3x3-20Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

20Dge嘉泰姆

3Dge嘉泰姆

28Dge嘉泰姆

0.75Dge嘉泰姆

5Dge嘉泰姆

800Dge嘉泰姆

CXSD62107Dge嘉泰姆

TQFN3x3-16Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

1Dge嘉泰姆

20Dge嘉泰姆

1.8Dge嘉泰姆

28Dge嘉泰姆

0.75Dge嘉泰姆

5Dge嘉泰姆

400Dge嘉泰姆

CXSD62108Dge嘉泰姆

QFN3.5x3.5-14Dge嘉泰姆

TQFN3x3-16Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

1Dge嘉泰姆

20Dge嘉泰姆

1.8Dge嘉泰姆

28Dge嘉泰姆

0.75Dge嘉泰姆

5Dge嘉泰姆

400Dge嘉泰姆

CXSD62109Dge嘉泰姆

TQFN3x3-16Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

20Dge嘉泰姆

1.8Dge嘉泰姆

28Dge嘉泰姆

0.75Dge嘉泰姆

5Dge嘉泰姆

400Dge嘉泰姆

CXSD62110Dge嘉泰姆

QFN3x3-20Dge嘉泰姆

TQFN3x3-16Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

20Dge嘉泰姆

3Dge嘉泰姆

28Dge嘉泰姆

1.8|1.5|0.5Dge嘉泰姆

5Dge嘉泰姆

740Dge嘉泰姆

CXSD62111Dge嘉泰姆

TQFN4x4-24Dge嘉泰姆

|QFN3x3-20Dge嘉泰姆

CMDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

15Dge嘉泰姆

5Dge嘉泰姆

28Dge嘉泰姆

0.5Dge嘉泰姆

NDge嘉泰姆

3000Dge嘉泰姆

CXSD62112Dge嘉泰姆

TDFN3x3-10Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

1Dge嘉泰姆

20Dge嘉泰姆

1.8Dge嘉泰姆

28Dge嘉泰姆

0.5Dge嘉泰姆

5Dge嘉泰姆

250Dge嘉泰姆

CXSD62113|CDge嘉泰姆

TQFN3x3-20Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

15Dge嘉泰姆

6Dge嘉泰姆

25Dge嘉泰姆

2Dge嘉泰姆

NDge嘉泰姆

550Dge嘉泰姆

CXSD62113EDge嘉泰姆

TQFN 3x3 20Dge嘉泰姆

COTDge嘉泰姆

2Dge嘉泰姆

2Dge嘉泰姆

11Dge嘉泰姆

6Dge嘉泰姆

25Dge嘉泰姆

2Dge嘉泰姆

NDge嘉泰姆

550Dge嘉泰姆

CXSD62114Dge嘉泰姆

TQFN3x3-20Dge嘉泰姆

COTDge嘉泰姆

2Dge嘉泰姆

2Dge嘉泰姆

11Dge嘉泰姆

5.5Dge嘉泰姆

25Dge嘉泰姆

2Dge嘉泰姆

NDge嘉泰姆

280Dge嘉泰姆

CXSD62115Dge嘉泰姆

QFN4x4-24Dge嘉泰姆

VMDge嘉泰姆

2Dge嘉泰姆

1Dge嘉泰姆

60Dge嘉泰姆

3.1Dge嘉泰姆

13.2Dge嘉泰姆

0.85Dge嘉泰姆

12Dge嘉泰姆

5000Dge嘉泰姆

CXSD62116A|B|CDge嘉泰姆

SOP-8PDge嘉泰姆

VMDge嘉泰姆

1Dge嘉泰姆

1Dge嘉泰姆

20Dge嘉泰姆

2.9Dge嘉泰姆

13.2Dge嘉泰姆

0.8Dge嘉泰姆

12Dge嘉泰姆

16000Dge嘉泰姆

CXSD62117Dge嘉泰姆

SOP-20Dge嘉泰姆

VMDge嘉泰姆

2Dge嘉泰姆

2Dge嘉泰姆

30Dge嘉泰姆

10Dge嘉泰姆

13.2Dge嘉泰姆

1Dge嘉泰姆

12Dge嘉泰姆

5000Dge嘉泰姆

CXSD62118Dge嘉泰姆

TDFN3x3-10Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

1Dge嘉泰姆

25Dge嘉泰姆

1.8Dge嘉泰姆

28Dge嘉泰姆

0.7Dge嘉泰姆

5Dge嘉泰姆

250Dge嘉泰姆

CXSD62119Dge嘉泰姆

TQFN3x3-20Dge嘉泰姆

COTDge嘉泰姆

2Dge嘉泰姆

1Dge嘉泰姆

40Dge嘉泰姆

1.8Dge嘉泰姆

25Dge嘉泰姆

REFIN SettingDge嘉泰姆

5Dge嘉泰姆

700Dge嘉泰姆

CXSD62120Dge嘉泰姆

QFN 3x3 20Dge嘉泰姆

TQFN 3x3 16Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

20Dge嘉泰姆

3Dge嘉泰姆

28Dge嘉泰姆

1.8|1.5 1.35|1.2 0.5Dge嘉泰姆

5Dge嘉泰姆

800Dge嘉泰姆

CXSD62121ADge嘉泰姆

TQFN3x3 20Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

15Dge嘉泰姆

3Dge嘉泰姆

28Dge嘉泰姆

0.75Dge嘉泰姆

5Dge嘉泰姆

220Dge嘉泰姆

CXSD62121BDge嘉泰姆

TQFN3x3 20Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

15Dge嘉泰姆

3Dge嘉泰姆

28Dge嘉泰姆

0.75Dge嘉泰姆

5Dge嘉泰姆

220Dge嘉泰姆

CXSD62121Dge嘉泰姆

TQFN3x3-20Dge嘉泰姆

COTDge嘉泰姆

1Dge嘉泰姆

2Dge嘉泰姆

20Dge嘉泰姆

3Dge嘉泰姆

28Dge嘉泰姆

0.75Dge嘉泰姆

5Dge嘉泰姆

180Dge嘉泰姆

 Dge嘉泰姆

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