首页 > 产品中心 > 功率器件 > N沟道P沟道双极MOSFETs >CXMS5230采用先进的沟道技术在栅极电压低至4.5V的情况下提供RDS（ON）低栅极电荷和操作性能适合用作负载开关或PWM应用高功率和电流处理能力
CXMS5230采用先进的沟道技术在栅极电压低至4.5V的情况下提供RDS（ON）低栅极电荷和操作性能适合用作负载开关或PWM应用高功率和电流处理能力
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CXMS5230采用先进的沟道技术，在栅极电压低至4.5V的情况下，提供了优良的RDS（ON）、低栅极电荷和操作性能，适合用作负载开关或PWM应用。高功率和电流处理能力
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[ CXMS5230 ]
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产品概述 返回TOP
The CXMS5230 uses advanced trench technology to prov ide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
产品特点 返回TOP
● VDS = -30V,ID = -5.1A
RDS(ON) < 105mΩ @ VGS=-4.5V
RDS(ON) < 55mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
应用范围 返回TOP
●PWM applications
●Load switch
●Power management
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| MOSFET及分立器件>>金属氧化物半导体场效应管(MOSFET) | ||||||
| Part No. | Mode | VDS(Max.) | ID(Max.) | RDS(on)(Max.) | Package | Reference |
| CXMS5225 | P-Channel | -20V | -3A | 64mΩ | SOT23 | APM2301 SI2301 |
| CXMS5226 | P-Channel | -20V | -4.1A | 39mΩ | SOT23 | APM2305 SI2305 |
| CXMS5227 | P-Channel | -30V | -4.1A | 55mΩ | SOT23 | 3407 2307 |
| CXMS5228 | P-Channel | -30V | -4.2A | 50mΩ | SOT23 | AO3401 2303 |
| CXMS5229 | P-Channel | -30V | -5.1A | 48mΩ | SOP8 | 9435 |
| CXMS5230 | Dual P-Channel | -30V | -5.1A | 48mΩ | SOP8 | 4953 |
| CXMS5231 | P-Channel | -30V | -9.1A | 15mΩ | SOP8 | 4435 |
| CXMS5248 | P-Channel | -300V | -170mA | 17Ω | TO92 | BSP304 |
| CXMS5232 | N-Channel | 20V | 2.9A | 30mΩ | SOT23 | SI2302 |
| CXMS5233 | Dual N-Channel | 20V | 4A | 19.5mΩ | SOT23-6 | 8205 |
| CXMS5234 | N-Channel | 20V | 5A | 22mΩ | SOT23 | |
| CXMS5235A | Dual N-Channel | 20V | 6A | 21mΩ | TSSOP8 | 8205A |
| CXMS5235B | Dual N-Channel | 20V | 6A | 16mΩ | TSSOP8 SOT23-6 | |
| CXMS5236 | Dual N-Channel | 20V | 6A | 26mΩ | SOP8 | 9926 |
| CXMS5237E | Dual N-Channel(ESD) | 20V | 6A | 17mΩ | TSSOP8 | 8205E |
| CXMS5238NE | Dual N-Channel(ESD) | 20V | 6A | 17mΩ | SOT23-6 | 8205E |
| CXMS5239E | Dual N-Channel(ESD) | 20V | 7A | 15mΩ | TSSOP8 | 8205E |
| CXMS5240NE | Dual N-Channel(ESD) | 20V | 7A | 15mΩ | SOT23-6 | 8205E |
| CXMS5241 | N-Channel | 30V | 3.6A | 39mΩ | SOT23 | |
| CXMS5242 | N-Channel | 30V | 5.8A | 28mΩ | SOT23 | 3400 |
| CXMS5243 | N-Channel | 30V | 5.8A | 25.5mΩ | SOT23 | |
| CXMS5244K | N-Channel | 30V | 50A | 8mΩ | TO252 | |
| CXMS5245K | N-Channel(ESD) | 50V | 220mA | 1Ω | SOT23 | |
| CXMS5246 | N-Channel | 60V | 115mA | 1.1Ω | SOT23 | 2N7002 |
| CXMS5246K | N-Channel(ESD) | 60V | 300mA | 1Ω | SOT23 | 2N7002K |
| CXMS5247 | N-Channel | 200V | 300mA | 5Ω | TO92 | BS108 |
| CXMS5249 | Dual N-Channel | 12V | 21A | 5.5mΩ | CSP6 | EFC6611R |
◀ 上一篇:CXMS5224双N沟道增强型场效应晶体管采用高密度DMOS沟道技术制造用于减小通态电阻适合于低电压应用和低功耗。
下一篇▶:CXMS5233采用先进的沟道技术在低至2.5V的栅极电压下提供RDS（ON）低栅极充电和操作适合用作电池保护或其他开关应用高功率和电流处理能力
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