供应场效应管7N60,电压600V,电流7A

   FEATURESUN7嘉泰姆

• OriginativeNew DesignUN7嘉泰姆

• Superior Avalanche Rugged TechnologyRobust Gate Oxide Technology     UN7嘉泰姆

• Very Low Intrinsic CapacitancesUN7嘉泰姆

• Excellent Switching CharacteristicsUN7嘉泰姆

• Unrivalled Gate Charge : 30 nC (Typ.)UN7嘉泰姆

• Extended Safe Operating AreaUN7嘉泰姆

• Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10VUN7嘉泰姆

• 100% Avalanche Tested
   Notes ;UN7嘉泰姆

• Repetitive Rating : Pulse width limited by maximum junction temperatureUN7嘉泰姆

•  L=15.7mH, IAS=7.0A, VDD=50V, RG=25Ω, Starting TJ =25°CUN7嘉泰姆

• ISD≤7.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °CUN7嘉泰姆

• Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%UN7嘉泰姆

• Essentially Independent of Operating TemperatureUN7嘉泰姆

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 Package DimensionUN7嘉泰姆

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                                                                  TO-220 (A)UN7嘉泰姆

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                                                     TO-220 (B)

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UN7嘉泰姆