CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

发布时间：2020-04-06 09:43:38 浏览次数：703 作者：嘉泰姆

摘要：CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

产品特点 返回TOP56U嘉泰姆

z 20V/6A 56U嘉泰姆

RDS(ON) =18mΩ@ VGS=4.5V,ID=6A 56U嘉泰姆

RDS(ON) =19mΩ@ VGS=3.85V,ID=5A 56U嘉泰姆

z High Density Cell Design For Ultra Low On-Resistance 56U嘉泰姆

z Surface mount package：SOP8 z ESD Protected: 3000 V56U嘉泰姆

应用范围 返回TOP56U嘉泰姆

z Battery management 56U嘉泰姆

z power management 56U嘉泰姆

z Portable equipment 56U嘉泰姆

z Low power DC to DC converter. 56U嘉泰姆

z Load switch z LCD adapter56U嘉泰姆

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产品封装图 返回TOP56U嘉泰姆

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电路原理图 返回TOP56U嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)56U嘉泰姆
Part Number56U嘉泰姆	Mode56U嘉泰姆	VDS(Max)56U嘉泰姆	VGS56U嘉泰姆	ID(Max)56U嘉泰姆	RDS(on)56U嘉泰姆	Application56U嘉泰姆	Package56U嘉泰姆
Part Number56U嘉泰姆	Mode56U嘉泰姆	VDS(Max)56U嘉泰姆	VGS56U嘉泰姆	ID(Max)56U嘉泰姆	RDS(on)56U嘉泰姆	Application56U嘉泰姆	Package56U嘉泰姆
CXMS521356U嘉泰姆	N channel56U嘉泰姆	20V56U嘉泰姆	12V56U嘉泰姆	5.2A56U嘉泰姆	37mΩ56U嘉泰姆	①②③④⑤⑥⑦⑧56U嘉泰姆	SOT2356U嘉泰姆
CXMS522056U嘉泰姆	N channel56U嘉泰姆	20V56U嘉泰姆	8V56U嘉泰姆	3A56U嘉泰姆	22mΩ56U嘉泰姆	①②③④⑤⑥⑦⑧56U嘉泰姆	SOT23/SOT23-356U嘉泰姆
CXMS5220-N56U嘉泰姆	N channel56U嘉泰姆	20V56U嘉泰姆	12V56U嘉泰姆	5.2A56U嘉泰姆	29mΩ56U嘉泰姆	①②③④⑤⑥⑦⑧56U嘉泰姆	SOT2356U嘉泰姆
CXMS522156U嘉泰姆	Double N56U嘉泰姆	20V56U嘉泰姆	12V56U嘉泰姆	6A56U嘉泰姆	22mΩ56U嘉泰姆	①②③④⑤⑥⑦⑧56U嘉泰姆	SOP856U嘉泰姆
CXMS522256U嘉泰姆	N channel56U嘉泰姆	30V56U嘉泰姆	12V56U嘉泰姆	5.8A56U嘉泰姆	25mΩ56U嘉泰姆	①②③④⑤⑥⑦⑧56U嘉泰姆	SOT23/SOT23-356U嘉泰姆
CXMS5222-N56U嘉泰姆	N channel56U嘉泰姆	30V56U嘉泰姆	20V56U嘉泰姆	4.4A56U嘉泰姆	35mΩ56U嘉泰姆	①②③④⑤⑥⑦⑧56U嘉泰姆	SOT2356U嘉泰姆
CXMS522356U嘉泰姆	Double N56U嘉泰姆	20V56U嘉泰姆	12V56U嘉泰姆	6A56U嘉泰姆	21mΩ56U嘉泰姆	①②③④⑤</span>56U嘉泰姆	SOT23-6/ TSSOP856U嘉泰姆
CXMS522456U嘉泰姆	Double N56U嘉泰姆	20V56U嘉泰姆	12V56U嘉泰姆	5A56U嘉泰姆	19mΩ56U嘉泰姆	①②③④⑤⑥⑦⑧56U嘉泰姆	TSSOP8/SOT2656U嘉泰姆
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection56U嘉泰姆

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CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

目录

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

目录

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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